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IXBT12N300

Bipolar MOS Transistor

Description

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT12N300 IXBH12N300 VCES = IC110 = VCE(sat) ≤ 3000V 12A 3.2V Symbol VCES VCGR VGES VGEM IC25 IICCM110 SSOA (RBSOA) PC TJ TJM Tstg TTLSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TTCC = 110°C = 25°C, 1ms VGE = 15V,...

IXYS

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IXBT12N300 Bipolar MOS Transistor - IXYS

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