Planar Diodes. 1N4150 Datasheet


1N4150 Diodes. Datasheet pdf. Equivalent


Part Number

1N4150

Description

Silicon Planar Diodes

Manufacture

Diotec Semiconductor

Total Page 2 Pages
Datasheet
Download 1N4150 Datasheet


1N4150
Silicon Planar Diodes
1N 4148, 1N 4150, 1N 4151, 1N 4448
Silizium-Planar-Dioden
Dimensions / Maße in mm
Nominal current
Nennstrom
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Glass case
Glasgehäuse
Weight approx.
Gewicht ca.
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
150...300 mA
50…100 V
DO-35
SOD-27
0.13 g
see page 16
siehe Seite 16
Maximum ratings
Type
Typ
1N 4148
1N 4150
1N 4151
1N 4448
Reverse voltage
Sperrspannung
VRM [V]
75
50
50
75
Grenzwerte
Reverse Breakdown Voltage
Abbruchspannung
VRRM [V] 1)
100
50
75
100
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Non-repetitive peak fwd. current
Stoßstrom Grenzwert
Max. power dissipation
Max. Verlustleistung
tp = 1 :s
Tj = 25/C
TA = 25/C
Operating junction temp. – Sperrschichttemp.
Storage temperature – Lagerungstemperatur
IFAV
IFRM
IFSM
Ptot
Tj
TS
1N 4148
1N 4448
150 mA2)
1N 4150
300 mA2)
1N 4151
200 mA2)
500 mA2) 600 mA2) 500 mA2)
2000 mA 4000 mA 2000 mA
500 mW 2)
- 50…+ 200/C
- 50…+ 200/C
1) Tested with 100 :A pulses – Gemessen mit 100 :A-Impulsen
2) Valid, if leads are kept at TA = 25/C at a distance of 5 mm from case
Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf TA = 25/C gehalten werden
34
01.10.2002

1N4150
1N 4148, 1N 4150, 1N 4151, 1N 4448
Characteristics, Tj = 25/C
Type
Forward voltage
Typ Durchlaßspannung
1N 4148
VF [V]
<1
IF [mA]
10
1N 4150
1N 4151
1N 4448
0.54...0.62
0.66...0.74
0.76...0.86
0.82...0.92
0.87...1.00
<1
0.62...0.72
<1
1
10
50
100
200
50
5
100
Leakage current
Sperrstrom
Kennwerte, Tj = 25/C
Rev. recovery time 1)
Sperrverzugszeit 1)
IR [nA]
< 25
< 5.000
< 50.000
< 100
< 100.000
VR [V]
20
75
20 (Tj = 150/C)
50
50 (Tj = 150/C)
trr [ns]
<4
<4
< 50
< 50.000
< 20
< 5.000
< 50.000
50
50 (Tj = 150/C)
25
75
20 (Tj = 150/C)
<2
<4
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA < 0.3 K/mW 2)
1) IF = 10 mA über / through IR = 10 mA bis / to IR = 1 mA, UR = 6 V, RL = 100 S
2) Valid, if leads are kept at TA = 25/C at a distance of 5 mm from case
Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf TA = 25/C gehalten werden
01.10.2002
35


Features 1N 4148, 1N 4150, 1N 4151, 1N 4448 Silic on Planar Diodes Silizium-Planar-Dioden Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitze nsperrspannung Glass case Glasgehäuse Weight approx. Gewicht ca. Dimensions / Maße in mm 150...300 mA 50…100 V D O-35 SOD-27 0.13 g see page 16 siehe Se ite 16 Standard packaging taped in amm o pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings Type Typ 1N 4148 1N 4150 1N 4151 1N 4448 Reverse vo ltage Sperrspannung VRM [V] 75 50 50 75 Grenzwerte Reverse Breakdown Voltage Abbruchspannung VRRM [V] 1) 100 50 75 1 00 1N 4148 1N 4448 Max. average forwar d rectified current, R-load Dauergrenzs trom in Einwegschaltung mit R-Last Repe titive peak forward current Periodische r Spitzenstrom Non-repetitive peak fwd. current Stoßstrom Grenzwert Max. powe r dissipation Max. Verlustleistung tp = 1 :s Tj = 25/C TA = 25/C IFAV IFRM IFS M Ptot Tj TS 150 mA2) 500 mA2) 2000 mA 1N 4150 300 mA2) 600 mA2) 4000 mA 500 mW 2) - 50…+ 200/C - 50…+ 200.
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