1N415E
SILICON MIXER DIODE
DESCRIPTION:
The ASI 1N415E is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz.
PACKAGE STYLE DO- 23
FEATURES:
High burnout resistance Low noise figure Hermetically sealed package
MAXIMUM RATINGS
IF VR PDISS TJ TSTG 20 mA 1.0 V 2.0 (ERGS) @ TC = 25 °C -55 °C to +150 °C -55 °C to +150 °C
NON...
