APM2306A
N-Channel Enhancement Mode MOSFET
Features
Pin Description
30V/3.5A ,
RDS(ON)=42mΩ(typ.) @ VGS=10V RDS(ON)=70mΩ(typ.) @ VGS=5V
Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available
(RoHS Compliant)
Applications
Power Management in Notebook Computer,
Portable Equipment and Battery Powered Systems.
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