PJM250N40TO N- Enhancement Mode Field Effect Transistor
Features
⚫ High density cell design for ultra low RDS(on) ⚫ Low RDS(ON) and Gate Charge ⚫ Excellent package for good heat dissipation
Applications
⚫ Power switching application ⚫ Hard switched and high frequency circuits ⚫ Uninterruptible power supply
TO-220
1
2 3
Schematic Diagram
Drain 2
1 Gate
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