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PJM80H04NTE

N-Channel MOSFET

Description

Descriptions  Fast Switching  Low RDS(ON) and Gate Charge  Low Reverse Transfer Capacitance  100% Single Pluse Avanlanche Energy Test Features  VDS = 800V, ID = 4A  RDS(ON) ＜ 3.6 Ω (@VGS=10V)  ESD Protected ＞ 4kV (HBM)  MSL: 1 Level Applications  Power Switch  Adaptor, Charger Absolute Maximum Ratings Ratings at TC =25℃ unless otherwise specified...

Ping Jing

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PJM80H04NTE N-Channel MOSFET - Ping Jing

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