Nov 2014
SE80100 N-Channel Enhancement-Mode MOSFET
Revision: A
General Description
Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Simple Drive Requirement Small Package Outline Surface Mount Device
Features
For a single MOSFET
VDS = 80V RDS(ON) = 6.8mΩ @ VGS=10
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