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HY1203S

N-Channel Enhancement Mode MOSFET

Description

HY1203S Feature  30V/12A RDS(ON) = 7.5 mΩ(typ.)@VGS = 10V RDS(ON) = 9.0 mΩ(typ.)@VGS = 4.5V  Avalanche Rated  Reliable and Rugged  Lead Free Devices Available N-Channel Enhancement Mode MOSFET Pin Description DD DD S S S G SOP-8 Applications  Power Management in DC/DC Converter  Switching application N-Channel MOSFET Ordering and Marking Informatio...

HOOYI

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HY1203S N-Channel Enhancement Mode MOSFET - HOOYI

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