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HY2N7002E

N-Channel Enhancement Mode MOSFET

Description

HY2N7002E N-Channel Enhancement Mode MOSFET Feature  60V/200mA RDS(ON)= 2.4Ω(typ.) @ VGS = 10V RDS(ON)= 3.0Ω(typ.) @ VGS = 5V RDS(ON)= 3.1Ω(typ.) @ VGS = 4.5V  Avalanche Rated  Lead Free Devices Available  Reliable and Rugged  ESD Protected  HBM：＞1KV Applications  Networking  Switching application  Hand-held Instruments Ordering and Marking Inform...

HUAYI

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HY2N7002E N-Channel Enhancement Mode MOSFET - HUAYI

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