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HY025N08B6

N-Channel Enhancement Mode MOSFET

Description

HY025N08B6 N-Channel Enhancement Mode MOSFET Feature  80V/310A RDS(ON)= 2mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free and Green Devices Available (RoHS Compliant) Applications  Brushless Motor Drive  Switching application  Electric Power Steering Ordering and Marking Information Pin Description Pin7 Pin1 TO-263-6L P...

HUAYI

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HY025N08B6 N-Channel Enhancement Mode MOSFET - HUAYI

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