Effect Transistor. YJH03N10A Datasheet

YJH03N10A Datasheet PDF, Equivalent


Part Number

YJH03N10A

Description

N-Channel Enhancement Mode Field Effect Transistor

Manufacture

Yangzhou Yangjie

Total Page 6 Pages
PDF Download
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YJH03N10A Datasheet
YJH03N10A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
● ID
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
100V
3A
110 mohm
120 mohm
General Description
● Trench Power MV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
Applications
● DC-DC Converters
● Power management functions
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
Drain Current
Pulsed Drain Current A
TA=25
TA=70
Total Power Dissipation
TA=25
TC=25
Thermal Resistance Junction-to-Ambient B
Thermal Resistance Junction-to-Case
Junction and Storage Temperature Range
Ordering Information (Example)
PREFERED P/N
PACKING
CODE
Marking
VDS
VGS
ID
IDM
PD
RθJA
RθJC
TJ ,TSTG
100
±20
3
2.4
12
1.5
4.0
83
31
-55+150
V
V
A
A
W
W
/ W
/ W
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY MODE
YJH03N10A
F2
1003.
1000
10000
40000
7“ reel
S-S1931
Rev.2.0,25-Dec-18
1/6
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com

YJH03N10A Datasheet
YJH03N10A
Electrical Characteristics (TJ=25unless otherwise noted)
Parameter
Symbol
Conditions
Static Parameter
Drain-Source Breakdown Voltage
BVDSS
VGS= 0V, ID=250μA
Zero Gate Voltage Drain Current
IDSS
VDS=100V,VGS=0V
Gate-Body Leakage Current
IGSS VGS= ±20V, VDS=0V
Gate Threshold Voltage
VGS(th)
VDS= VGS, ID=250μA
Static Drain-Source On-Resistance
RDS(ON)
VGS= 10V, ID=3A
VGS= 4.5V, ID=2.4A
Diode Forward Voltage
VSD IS=3A,VGS=0V
Maximum Body-Diode Continuous Current
IS
Dynamic Parameters
Input Capacitance
Ciss
Output Capacitance
Coss VDS=50V,VGS=0V,f=1MHZ
Reverse Transfer Capacitance
Crss
Switching Parameters
Total Gate Charge
Qg
Gate-Source Charge
Qgs VGS=10V,VDS=50V,ID=3A
Gate-Drain Charge
Qgd
Turn-on Delay Time
tD(on)
Turn-on Rise Time
Turn-off Delay Time
tr
tD(off)
VGS=10V,VDD=50V,RL=6.4Ω
RGEN=3Ω
Turn-off fall Time
tf
A. Pulse Test: Pulse Width300us,Duty cycle 2%.
B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
Min
Typ
Max
Units
100 V
1 μA
±100
nA
1 1.8 2.5 V
95 110
100 120
0.8 1.2
V
3A
785
38 pF
30
16
2.5 nC
2.6
5
40
ns
20
7
S-S1931
Rev.2.0,25-Dec-18
2/6
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com


Features Datasheet pdf YJH03N10A RoHS COMPLIANT N-Channel Enh ancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS( ON)( at VGS=10V) ● RDS(ON)( at VGS=4. 5V) 100V 3A <110 mohm <120 mohm G eneral Description ● Trench Power MV MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applicatio ns ● DC-DC Converters ● Power manag ement functions ■ Absolute Maximum R atings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain -source Voltage Gate-source Voltage Dr ain Current Pulsed Drain Current A TA= 25℃ TA=70℃ Total Power Dissipation TA=25℃ TC=25℃ Thermal Resistance Junction-to-Ambient B Thermal Resista nce Junction-to-Case Junction and Stor age Temperature Range ■ Ordering Inf ormation (Example) PREFERED P/N PACKI NG CODE Marking VDS VGS ID IDM PD Rθ JA RθJC TJ ,TSTG 100 ±20 3 2.4 12 1. 5 4.0 83 31 -55~+150 V V A A W W ℃ / W ℃/ W ℃ MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) .
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