PNP Transistor. PBSM5240PF Datasheet

PBSM5240PF Transistor. Datasheet pdf. Equivalent


nexperia PBSM5240PF
PBSM5240PF
40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel
Trench MOSFET
Rev. 2 — 20 April 2011
Product data sheet
1. Product profile
1.1 General description
Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and
N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
„ Very low collector-emitter saturation voltage VCEsat
„ High collector current capability IC and ICM
„ High collector current gain (hFE) at high IC
„ High energy efficiency due to less heat generation
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
„ Loadswitch
„ Power management
„ Power switches (e.g. motors, fans)
„ Battery-driven devices
„ Charging circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
PNP low VCEsat (BISS) transistor
VCEO collector-emitter voltage
IC collector current
ICRM
repetitive peak collector
current
open base
ICM
RCEsat
peak collector current
collector-emitter
saturation resistance
single pulse; tp 1 ms
IC = 500 mA;
IB = 50 mA
Min Typ Max Unit
-
[1] -
[1][5] -
[1] -
[2] -
- 40 V
1.8 A
- 2 A
- 3 A
240 340 mΩ


PBSM5240PF Datasheet
Recommendation PBSM5240PF Datasheet
Part PBSM5240PF
Description PNP Transistor
Feature PBSM5240PF; PBSM5240PF 40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET Rev. 2 — 20 Apr.
Manufacture nexperia
Datasheet
Download PBSM5240PF Datasheet




nexperia PBSM5240PF
Nexperia
PBSM5240PF
40 V, 2 A PNP BISS/Trench MOSFET module
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
N-channel Trench MOSFET
VDS drain-source voltage
VGS gate-source voltage
ID drain current
RDSon drain-source on-state
resistance
Tamb = 25 °C
Tamb = 25 °C
Tamb = 25 °C;
VGS = 10 V
Tj = 25 °C; VGS = 4.5 V;
ID = 0.2 A
Min Typ Max Unit
- - 30 V
- - ±8 V
[3] - - 0.66 A
[4] - 370 580 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[2] Pulse test: tp 300 μs; δ ≤ 0.02.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[4] Pulse test: tp 300 μs; δ ≤ 0.01.
[5] Pulse test: tp 20 ms; δ ≤ 0.10.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
8
Pinning
Description
emitter
base
drain
source
gate
collector
collector
drain
Simplified outline
654
Graphic symbol
6, 7 5 4
78
123
Transparent top view
1 2 3, 8
017aaa079
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
Version
PBSM5240PF
HUSON6 plastic thermal enhanced ultra thin small outline
SOT1118
package; no leads; 6 terminals; body 2 × 2 × 0.65 mm
4. Marking
Table 4. Marking codes
Type number
PBSM5240PF
Marking code
1G
PBSM5240PF
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 20 April 2011
© Nexperia B.V. 2017. All rights reserved
2 of 20



nexperia PBSM5240PF
Nexperia
PBSM5240PF
40 V, 2 A PNP BISS/Trench MOSFET module
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min Max Unit
PNP low VCEsat (BISS) transistor
VCBO
collector-base voltage
VCEO
collector-emitter voltage
VEBO
emitter-base voltage
IC collector current
ICRM
repetitive peak collector
current
open emitter
open base
open collector
ICM peak collector current single pulse;
tp 1 ms
IB base current
IBM
peak base current
single pulse;
tp 1 ms
Ptot total power dissipation Tamb 25 °C
-
-
-
[1] -
[1][4] -
[1] -
[1] -
[1] -
[1] -
[2] -
40
40
5
1.8
2
3
300
1
1.1
1.25
V
V
V
A
A
A
mA
A
W
W
N-channel Trench MOSFET
VDS drain-source voltage
VDG drain-gate voltage
VGS gate-source voltage
ID drain current
IDM peak drain current
Ptot total power dissipation
Source-drain diode
Tamb = 25 °C
Tamb = 25 °C;
RGS = 20 kΩ
Tamb = 25 °C
VGS = 10 V
Tamb = 25 °C
Tamb = 100 °C
Tamb = 25 °C;
single pulse;
tp 10 μs
Tamb = 25 °C
-
-
-
[3]
-
-
-
[3] -
30 V
30 V
±8 V
660 mA
420 mA
3.56 A
760 mW
IS source current
Per device
Tamb = 25 °C
- 660 mA
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
- 150 °C
55 +150 °C
65 +150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[4] Pulse test: tp 20 ms; δ ≤ 0.10.
PBSM5240PF
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 20 April 2011
© Nexperia B.V. 2017. All rights reserved
3 of 20







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