N-Channel MOSFET. AON6426 Datasheet

AON6426 MOSFET. Datasheet pdf. Equivalent


Alpha & Omega Semiconductors AON6426
AON6426
30V N-Channel MOSFET
General Description
The AON6426 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load
switch and battery protection applications.
Product Summary
VDS (V) = 30V
ID = 65A
RDS(ON) < 5.5m
RDS(ON) < 7.5m
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
100% UIS Tested!
100% Rg Tested!
Top View
DFN5X6
Bottom View
PIN1
Top View
18
27
36
45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
65
43
130
14
11
42
88
42
17
2
1.2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
24
53
2.6
Max
30
64
3
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com


AON6426 Datasheet
Recommendation AON6426 Datasheet
Part AON6426
Description 30V N-Channel MOSFET
Feature AON6426; AON6426 30V N-Channel MOSFET General Description The AON6426 combines advanced trench MOSFET techno.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AON6426 Datasheet




Alpha & Omega Semiconductors AON6426
AON6426
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
30
1.3
130
36.7
1
5
100
1.8 2.5
4.5 5.5
6.8 8.2
6 7.5
53
0.7 1
40
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1930 2300 pF
290 pF
230 pF
0.7 1.4 2.1
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=15V, ID=20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.75,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
37 45 nC
18 nC
4.8 nC
11 nC
8.1 ns
8.6 ns
29 ns
8 ns
14 17 ns
40 nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev 2 : Nov-10
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com



Alpha & Omega Semiconductors AON6426
AON6426
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
130
120 10V
110
100
90
80
70
60
50
40
30
20
10
0
0
1
4.5
5V
2
4V
VGS=3.5V
34
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
80
70 VDS=5V
60
50
40
30
20 125°C
10 25°C
0
012345
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
8
7
VGS=4.5V
6
5
4 VGS=10V
3
2
0 5 10 15 20 25 30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
2
1.8 VGS=10V
1.6 ID=20A
1.4
1.2
1
17
5
VGS=4.5V 2
ID=20A 10
0.8
0
25 50 75 100 125 150 175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junct1io8n
Temperature (Note E)
200
16
14 ID=20A
12
10
8 125°C
6
4
25°C
2
0
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+02
1.0E+01
40
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
125°C
25°C
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com





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