12A TRIACS. BTB12-600TW Datasheet

BTB12-600TW TRIACS. Datasheet pdf. Equivalent

Part BTB12-600TW
Description 12A TRIACS
Feature BTA12, BTB12, T1205 T1210, T1235, T1250 Datasheet 12 A Snubberless™, logic level and standard Triacs.
Manufacture STMicroelectronics
Datasheet
Download BTB12-600TW Datasheet



BTB12-600TW
BTA12, BTB12, T1205
T1210, T1235, T1250
Datasheet
12 A Snubberless™, logic level and standard Triacs
A2
G
A1
A2
TO-220AB
G
A2
A1
A2
G
A1 A2
TO-220AB Ins.
D²PAK
A2 G
A1
Features
• Medium current Triac
• Low thermal resistance with clip bonding
• Low thermal resistance insulation ceramic for insulated BTA
• High commutation (4Q) or very high commutation (3Q) capability
• BTA series UL1557 certified (file ref: 81734)
• Packages are RoHS (2011/65/EU) compliant
Description
Available either in through-hole or surface mount packages, the BTA12, BTB12 and
T12xx Triac series are suitable for general purpose mains power AC switching. They
can be used as ON/OFF function in applications such as static relays, heating
regulation or induction motor starting circuit. They are also recommended for phase
control operations in light dimmers and appliance motors speed controllers.
The Snubberless™ versions (W suffix and T12xx) are especially recommended for
use on inductive loads, because of their high commutation performance. By using an
internal ceramic pad, the Snubberless™ series provide an insulated tab (rated at
2500 VRMS) complying with UL standards (file reference: E81734).
Logic Level BTA12-600TW and BTA12-600SW offer low holding current, ideal to
design light dimmers for LED lamps.
Product status link
BTA12
BTB12
T1205
T1210
T1235
T1250
Product summary
IT(RMS)
12 A
VDRM/VRRM
600 and 800 V
IGT(Snubberless) 5 / 10 / 35 / 50 mA
IGT(standard)
25 / 50
DS2115 - Rev 12 - February 2019
For further information contact your local STMicroelectronics sales office.
www.st.com



BTB12-600TW
BTA12, BTB12, T1205, T1210, T1235, T1250
Characteristics
1 Characteristics
Table 1. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)
Symbol
Parameter
Value
Unit
IT(RMS) RMS on-state current (full sine wave)
TO-220AB, D²PAK Tc = 105 °C
TO-220AB Ins.
Tc = 90 °C
12
A
ITSM
Non repetitive surge peak on-state current (full cycle, Tj f = 50 Hz
initial = 25 °C)
f = 60 Hz
t = 20 ms
tp = 16.7 ms
120
126
A
I2t I2t value for fusing
tp = 10 ms
78 A2s
dl/dt
Critical rate of rise of on-state current IG = 2 x IGT, tr ≤
100 ns
f = 120 Hz
Tj = 125 °C
50 A/µs
VDSM/VRSM Non repetitive surge peak off-state voltage
tp = 10 ms
Tj = 25 °C
VDRM / VRRM +
100
V
IGM Peak gate current
tp = 20 µs
Tj = 125 °C
4
A
PG(AV) Average gate power dissipation
Tj = 125 °C 1 W
Tstg Storage junction temperature range
-40 to +150 °C
Tj Operating junction temperature range
-40 to +125 °C
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified) - Snubberless™ and logic level
(3 quadrants)
Symbol
Parameter
Quadrant
T1205
BTB12-TW
BTA12-TW
T1210
BTB12-SW
BTA12-SW
T1235
T1250
BTB12-
CW
BTB12-
BW
BTA12-CW BTA12-BW
Unit
IGT (1)
VGT
VD = 12 V, RL = 30 Ω
I - II - III Max.
I - II - III Max.
5
10 35
1.3
50 mA
V
VGD VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C I - II - III Min.
0.2
V
IH (2) IT = 100 mA
I - II - III Max.
10
15
35
50 mA
IL (2) IG = 1.2 x IGT
I - III Max.
10
25
50
70
mA
II Max. 15 30 60 80
dV/dt (2) VD = 67% VDRM, gate open, Tj = 125 °C
Max.
20
40 500 1000 V/µs
(dV/dt)c = 0.1 V/µs, Tj = 125 °C
Min. 3.5
6.5
(dl/dt)c (2) (dV/dt)c = 10 V/µs, Tj = 125 °C
Min. 1.0
2.9
A/ms
Without snubber, Tj = 125 °C
Min.
6.5 12
1. Minimum IGT is guaranteed at 5 % of IGT max.
2. For both polarities of A2 referenced to A1
DS2115 - Rev 12
page 2/16





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