Standard Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTH 24P20 IXTT 24P20
VDSS = - 200 V ID25 = - 24 A ≤RDS(on) 0.15 Ω
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg
Md Weight
Symbol
VDSS VGS(th) IGSS IDSS
RDS(on)
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJ TC = 25°C TC = 25°C TC = 25°C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plastic Body for 10s Mounting torque (TO-247) TO-247 TO-268
Maximum Ratings
-200 -200
V V
±20 V ±30 V
-24 A -96 A -24 A
30 mJ
300 W
-55 ... +150 150
-55 ... +150
°C °C °C
400 °C
250 °C
1.13/10 Nm/lb.in.
6g 5g
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 (IXTH)
D (TAB)
TO-268 (IXTT)
GS
D (TAB)
G = Gate, S = Source,
D = Drain, TAB = Drain
Features
• International standard packages
• Low RDS (on) HDMOSTM process .