N-Channel MOSFETS. 1404TR Datasheet

1404TR MOSFETS. Datasheet pdf. Equivalent

1404TR Datasheet
Recommendation 1404TR Datasheet
Part 1404TR
Description N-Channel MOSFETS
Feature 1404TR; 1404TR N-Channel MOSFETS DESCRIPTION The OGFD 1404TR uses advanced trench technology and design to .
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GFD 1404TR
1404TR
N-Channel MOSFETS
DESCRIPTION
The OGFD 1404TR uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge. It can be used in a wide
variety of applications.
Features:
• High density cell design for ultra low Rdson.
• Fully characterized avalanche voltage and current.
• Good stability and uniformity with high EAS.
• Excellent package for good heat dissipation.
• Special process technology for high ESD capability.
VDSS RDS(ON) ID
40V 4mΩ 190A
Applications
• Power switching applications.
• In verter systems
• Hard switched and high frequency circuits.
• Uninterruptible power supply systems.
Ordering Information
PART NUMBER PACKAGE BRAND
1404TR
TO-220 0GFD
www.goford.cn TEL0755-86350980 FAX0755-86350963



GFD 1404TR
1404TR
Absolute Maximum Ratings (TC=25, unless otherwise noted)
Symbol
Parameter
1404TR
Units
VDSS
ID
IDM
PD
VGS
EAS
dv/dt
TJ and TSTG
Drain-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current@VG=10V
Power Dissipation
Derating Factor above 25
Gate-to-Source Voltage
Single PulseAvalanche Energy (L=1mH, IAS=40A)C
Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range
40
190
750
220
1.47
± 20
1400
5.0
-55 to 175
V
A
W
W/
V
mJ
V/ns
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
Min. Typ. Max. Units Test Conditions
Junction-to-Case
Water cooled heatsink, PD adjusted for
-- -- 0.68 /W a peak junction temperature of +175.
Junction-to-Ambient -- -- --
1 cubic foot chamber, free air.
OFF Characteristics TJ=25unless otherwise specified
Symbol
BVDSS
I GSS
Parameter
Min.
Drain-to-Source
Voltage
Breakdown
40
Gate-to-Source Forward Leakage --
Typ.
--
--
Max. Units Test Conditions
-- V VGS=0, ID=250uA
±100 nA VDS=0V, VGS=±20V
I D SS
Zero Gate Voltage Drain Current
--
--
1 uA VDS=40V, VGS=0V
ON Characteristics TJ=25unless otherwise specified
Symbol
RD S(ON)
VGS(TH)
Parameter
Static
On-Resistance
Min.
Drain-to-Source
--
Gate Threshold Voltage, Figure 12. 2.0
Typ.
--
--
Max Units Test Conditions
4 mΩ VGS=10V,ID=40A
4.0 V VDS=10V, ID=250uA
Gfs Forward Transconductance
170 ---
-- S VDS=50V, ID=75A
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GFD 1404TR
1404TR
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Ciss
Coss
Crss
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
-- 6500 --
-- 916 -- pF
-- 780 --
Test Conditions
VDS=25V,VGS=0V,
f=1.0MHZ
Qg Total Gate Charge
Qgs Gate-to-Source Charge
-- 163 --
-- 31 -- nC
VDS=30V, VGS=10V,
I D=30A
Qgd
Gate-to-Drain (“Miller”) Charge
-- 64 --
Resistive Switching Characteristics Essentially independent of operating temperature
Symbol
Td(ON)
Trise
Td(OFF)
Tfall
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min. Typ. Max. Units
26
24
ns
91
39
Test Conditions
VDD=30V, RL=15Ω
VGS=10V, RG=2.5Ω
I D=2A
www.goford.cn TEL0755-86350980 FAX0755-86350963





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