DatasheetsPDF.com

YJL2312A

N-Channel Enhancement Mode Field Effect Transistor

Description

YJL2312A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=4.5V) ● RDS(ON)( at VGS=2.5V) ● RDS(ON)( at VGS=1.8V) 20V 6.8A ＜18 mohm ＜22 mohm ＜39 mohm General Description ● Trench Power LV MOSFET technology ● High Power and current handing capability Applications ● PWM application ● Load switch...

Yangzhou Yangjie

Download YJL2312A Datasheet

Similar Datasheet

YJL2312A N-Channel Enhancement Mode Field Effect Transistor - Yangzhou Yangjie

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)