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AM29BDS323D

Advanced Micro Devices
Part Number AM29BDS323D
Manufacturer Advanced Micro Devices
Description 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write/ Burst Mode Flash Memory
Published Mar 23, 2005
Detailed Description PRELIMINARY Am29BDS323D 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory D...
Datasheet PDF File AM29BDS323D PDF File

AM29BDS323D
AM29BDS323D

Overview
PRELIMINARY Am29BDS323D 32 Megabit (2 M x 16-Bit) CMOS 1.
8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS s Single 1.
8 volt read, program and erase (1.
7 to 1.
9 volt) s Multiplexed Data and Address for reduced I/O count — A0–A15 multiplexed as D0–D15 — Addresses are latched with AVD# control inputs while CE# low s Simultaneous Read/Write operation — Data can be continuously read from one bank while executing erase/program functions in other bank — Zero latency between read and write operations s Read access times at 40 MHz — Burst access times of 20 ns @ 30 pF at industrial temperature range — Asynchronous random access times of 110 ns @ 30 pF — Synchronous random access times of 120 ns @ 30 pF s Burst length — Continuous linear burst s Power dissipation (typical values, 8 bits switching, CL = 30 pF) — Burst Mode Read: 25 mA — Simultaneous Operation: 40 mA — Program/Erase: 15 mA — Standby mode: 0.
2 µA s Sector Architecture — Eight 4 Kword sectors...


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