Planar Transistor. BTP2907AN3 Datasheet

BTP2907AN3 Transistor. Datasheet pdf. Equivalent

BTP2907AN3 Datasheet
Recommendation BTP2907AN3 Datasheet
Part BTP2907AN3
Description General Purpose PNP Epitaxial Planar Transistor
Feature BTP2907AN3; CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTP2907AN3 Spec. No. : C3.
Manufacture CYStech
Datasheet
Download BTP2907AN3 Datasheet




CYStech BTP2907AN3
CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
BTP2907AN3
Spec. No. : C317N3
Issued Date : 2003.06.30
Revised Date : 2016.02.01
Page No. : 1/8
Description
The BTP2907AN3 is designed for general purpose amplifier applications. It is housed in the
SOT-23 package which is designed for low power surface mount applications.
Low VCE(sat)
High switching speed.
Complementary to BTN2222AN3
Pb-free lead plating and halogen-free package
Symbol
BTP2907AN3
Outline
SOT-23
BBase
CCollector
EEmitter
Ordering Information
Device
BTP2907AN3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTP2907AN3
CYStek Product Specification



CYStech BTP2907AN3
CYStech Electronics Corp.
Spec. No. : C317N3
Issued Date : 2003.06.30
Revised Date : 2016.02.01
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation @TA=25
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj
Tstg
Note 1:When mounted on a FR-5 board with area measuring 1.0×0.75×0.062 in.
Limits
-60
-60
-5
-600
225 (Note 1)
556 (Note 1)
150
-55~+150
Unit
V
V
V
mA
mW
°C/W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
ICEX
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(sat)
*hFE
*hFE
*hFE
*hFE
*hFE
fT
Cob
Min.
-60
-60
-5
-
-
-
-
-
-
75
100
100
100
50
200
-
Typ.
-
-
-
-
-
-0.2
-0.5
-
-
-
-
-
-
-
-
Max.
-
-
-
-10
-50
-0.4
-1.6
-1.3
-2.6
-
-
-
300
-
-
8
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
-
-
MHz
pF
Test Conditions
IC=-10μA
IC=-10mA
IE=-10μA
VCB=-50V
VCE=-30V, VBE(OFF)=0.5V
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
VCE=-10V, IC=-100μA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-150mA
VCE=-10V, IC=-500mA
VCE=-20V, IC=-50mA, f=100MHz
VCB=-10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
BTP2907AN3
CYStek Product Specification



CYStech BTP2907AN3
CYStech Electronics Corp.
Spec. No. : C317N3
Issued Date : 2003.06.30
Revised Date : 2016.02.01
Page No. : 3/8
Typical Characteristics
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
Emitter Grounded Output Characteristics
1mA
500uA
400uA
300uA
200uA
-IB=100uA
1 234 5
-VCE, Collector-to-Emitter Voltage(V)
6
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
2mA
1.5mA
1mA
-IB=500uA
12 34 5
-VCE, Collector-to-Emitter Voltage(V)
6
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Emitter Grounded Output Characteristics
20mA
10mA
6mA
4mA
-IB=2mA
12 34 5
-VCE, Collector-to-Emitter Voltage(V)
6
1.2
1
0.8
0.6
0.4
0.2
0
0
Emitter Grounded Output Characteristics
50mA
25mA
20mA
10mA
-IB=5mA
12 345
-VCE, Collector-to-Emitter Voltage(V)
6
Current Gain vs Collector Current
1000
Tj=75°C
Tj=125°C
Current Gain vs Collector Current
1000
Tj=75°C
Tj=125°C
100
Tj=25°C Tj=0°C
Tj=-40°C
10
1
-VCE=1V
10 100
-IC, Collector Current(mA)
100
1000
Tj=25°C
Tj=0°C
Tj=-40°C
10
1
-VCE=2V
10 100
-IC, Collector Current(mA)
1000
BTP2907AN3
CYStek Product Specification







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