Flash Memory. AT25DQ161 Datasheet

AT25DQ161 Memory. Datasheet pdf. Equivalent

Part AT25DQ161
Description 2.7V Minimum SPI Serial Flash Memory
Feature AT25DQ161 16-Mbit, 2.7V Minimum SPI Serial Flash Memory with Dual-I/O and Quad-I/O Support DATASHEET.
Manufacture Adesto
Datasheet
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AT25DQ161
AT25DQ161
16-Mbit, 2.7V Minimum SPI Serial Flash Memory
with Dual-I/O and Quad-I/O Support
DATASHEET
Features
Single 2.7V - 3.6V supply
Serial Peripheral Interface (SPI) compatible
Supports SPI Modes 0 and 3
Supports RapidSoperation
Supports Dual- and Quad-Input Program
Supports Dual- and Quad-Output Read
Very high operating frequencies
100MHz for RapidS
85MHz for SPI
Clock-to-output time (tV) of 5ns maximum
Flexible, optimized erase architecture for code + data storage applications
Uniform 4KB, 32KB, and 64KB Block Erase
Full Chip Erase
Individual sector protection with Global Protect/Unprotect feature
32 sectors of 64KB each
Hardware controlled locking of protected sectors via WP pin
Sector Lockdown
Make any combination of 64KB sectors permanently read-only
128-byte One-Time Programmable (OTP) Security Register
Flexible programming
Byte/Page Program (1 to 256 bytes)
Fast Program and Erase times
1.0ms typical Page Program (256 bytes) time
50ms typical 4KB Block Erase time
250ms typical 32KB Block Erase time
400ms typical 64KB Block Erase time
Program and Erase Suspend/Resume
Automatic checking and reporting of erase/program failures
Software controlled reset
JEDEC Standard Manufacturer and Device ID Read Methodology
Low power dissipation
5mA Active Read current (typical at 20MHz)
5μA Deep Power-Down current (typical)
Endurance: 100,000 Program/Erase cycles
Data retention: 20 years
Complies with full industrial temperature range
Industry standard green (Pb/Halide-free/RoHS-compliant) package options
8-lead SOIC (0.150" and 0.208" wide)
8-pad Ultra Thin UDFN (5 x 6 x 0.6mm)
8671D–DFLASH–1/2013



AT25DQ161
1. Description
The AT25DQ161 is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer
based applications in which program code is shadowed from Flash memory into embedded or external RAM for
execution. The flexible erase architecture of the AT25DQ161, with its erase granularity as small as 4KB, makes it ideal
for data storage as well, eliminating the need for additional data storage EEPROM devices.
The physical sectoring and the erase block sizes of the AT25DQ161 have been optimized to meet the needs of today's
code and data storage applications. By optimizing the size of the physical sectors and erase blocks, the memory space
can be used much more efficiently. Because certain code modules and data storage segments must reside by
themselves in their own protected sectors, the wasted and unused memory space that occurs with large sectored and
large block erase Flash memory devices can be greatly reduced. This increased memory space efficiency allows
additional code routines and data storage segments to be added while still maintaining the same overall device density.
The AT25DQ161 also offers a sophisticated method for protecting individual sectors against erroneous or malicious
program and erase operations. By providing the ability to individually protect and unprotect sectors, a system can
unprotect a specific sector to modify its contents while keeping the remaining sectors of the memory array securely
protected. This is useful in applications where the program code is patched, updated on a subroutine or module basis, or
in applications where data storage segments need to be modified without running the risk of errant modifications to the
program code segments. In addition to individual sector protection capabilities, the AT25DQ161 incorporates Global
Protect and Global Unprotect features that allow the entire memory array to be either protected or unprotected all at
once. This reduces overhead during the manufacturing process since sectors do not have to be unprotected one-by-one
prior to initial programming.
To take code and data protection to the next level, the AT25DQ161 incorporates a sector lockdown mechanism that
allows any combination of individual 64KB sectors to be locked down and become permanently read-only. This
addresses the need of certain secure applications that require portions of the Flash memory array to be permanently
protected against malicious attempts at altering program code, data modules, security information or
encryption/decryption algorithms, keys, and routines. The device also contains a specialized OTP (One-Time
Programmable) Security Register that can be used for purposes such as unique device serialization, system-level
Electronic Serial Number (ESN) storage, locked key storage, etc.
Specifically designed for use in 3V systems, the AT25DQ161 supports read, program, and erase operations with a
supply voltage range of 2.7V to 3.6V. No separate voltage is required for programming and erasing.
AT25DQ161 [DATASHEET]
8671D–DFLASH–1/2013
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