Serial EEPROM. RM25C512C-L Datasheet

RM25C512C-L EEPROM. Datasheet pdf. Equivalent

Part RM25C512C-L
Description 512 Kbit 1.65V Minimum Non-volatile Serial EEPROM
Feature RM25C512C-L 512 Kbit 1.65V Minimum Non-volatile Serial EEPROM SPI Bus Preliminary Datasheet Features.
Manufacture Adesto
Datasheet
Download RM25C512C-L Datasheet



RM25C512C-L
RM25C512C-L
512 Kbit 1.65V Minimum
Non-volatile Serial EEPROM
SPI Bus
Preliminary Datasheet
Features
Memory array: 512 Kbit non-volatile serial EEPROM memory
Single supply voltage: 1.65V - 3.6V
Serial peripheral interface (SPI) compatible
-Supports SPI modes 0 and 3
1.6 MHz maximum clock rate for normal read
20 MHz maximum clock rate for fast read
Flexible Programming
- Byte/Page Program (1 to 128 Bytes)
- Page size: 128 Bytes
Low Energy Byte Write
-Byte Write consuming 50 nJ
Low power consumption
-0.25 mA active Read current (Typical)
-1 mA active Write current (Typical)
-2.2 µA power down current (Typical)
Fast Page Write
-Page Write in 3 ms (128 byte page)
-Byte Write within 60 µs
Industry’s lowest read cycle latency
Unlimited read cycles
Page or chip erase capability
8-lead SOIC and TSSOP packages
RoHS-compliant and halogen-free packaging
Data Retention: >40 years at 125°C
Endurance: 100,000 Write Cycles (for both byte and page write cycles)
- No degradation across temperature range
No data loss under UV exposure on bare die or WLCSP
Based on Adesto's proprietary CBRAM® technology
Description
The MavriqRM25C512C-L is a 512 Kbit, serial EEPROM device that utilizes
Adesto's CBRAM® resistive memory technology. The memory devices use a single
low-voltage supply ranging from 1.65V to 3.6V.
The Mavriq RM25C Series family is accessed through a 4-wire SPI interface
consisting of a Serial Data Input (SDI), Serial Data Output (SDO), Serial Clock (SCK),
and Chip Select (CS). The maximum clock (SCK) frequency in normal read mode is
1.6MHz. In fast read mode the maximum clock frequency is 20MHz.
DS-RM25C512C–079C–11/2017



RM25C512C-L
Writing into the device can be done from 1 to 128 bytes at a time. All writing is internally self-timed. The device also
features an Erase which can be performed on 128 byte pages or on the whole chip.
Adesto's EEPROM endurance can be as much as 40X higher than industry standard EEPROM devices operating in byte
write mode at 85°C. Unlike EEPROMs based on floating gate technology (which require read-modify-write on a whole
page for every write operation) CBRAM write endurance is based on the capability to write each byte individually,
irrespective of whether the user writes single bytes or an entire page. Additionally, unlike floating gate technology,
CBRAM does not experience any degradation of endurance across the full temperature range. By contrast, in order to
modify a single byte, most EEPROMs modify and write full pages of 32, 64 or 128 bytes. This provides significantly less
endurance for floating gate devices used in byte write mode when compared to page write mode.
The device has both Byte Write and Page Write capability. Page Write is 128 bytes. The Byte Write operation of Mavriq
memory consumes only 10% of the energy consumed by a Byte Write operation of EEPROM devices of similar size.
The Page Write operation of Mavriq memory is 4-6 times faster than the Page Write operation of similar EEPROM
devices. Both random and sequential reads are available. Sequential reads are capable of reading the entire memory in
one operation.
RM25C512C
DS-RM25C512C–079C–11/2017
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