Driver IC. TCK401G Datasheet

TCK401G IC. Datasheet pdf. Equivalent

Part TCK401G
Description External FET Driver IC
Feature TCK401G, TCK402G TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCK401G, TCK402G External.
Manufacture Toshiba
Datasheet
Download TCK401G Datasheet



TCK401G
TCK401G, TCK402G
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TCK401G, TCK402G
External FET Driver IC
The TCK401G and TCK402G are 28 V high input voltage
External FET driver IC. It has wide input voltage operation. And
this features a slew rate control driver with small package
WCSP6E (0.8 mm x 1.2 mm, t: 0.55 mm). Also it can block reverse
current if switch turned off by using external series FET. Thus this
is suitable for power management selector such as Battery Charge
application.
.
Feature
High maximum input voltage: VIN max = 40 V
Wide input voltage operation: VIN = 2.7 to 28 V
Auto output discharge terminal
Charge pump circuit
Inrush current reducing circuit.
Over Voltage lock out (Over 28 V)
Under Voltage lock out (Under 2.7 V)
Reverse Current Protection by External Back to Back MOSFET
Top marking (Top view)
1
A
B
C
2
A1: VGATE
B1: VSRC
C1: DIS
A2: VIN
B2: GND
C2: VCT
401: TCK401G
402: TCK402G
© 2017
Toshiba Electronic Devices & Storage Corporation
1
Weight: 1 mg(typ.)
Start of commercial production
2017-10
2017-09-19



TCK401G
TCK401G, TCK402G
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Input voltage
Control voltage
Output GATE voltage
SRC voltage
DIS voltage
Power dissipation
Operating temperature range
Junction temperature
Storage temperature
Symbol
VIN
VCT
VGATE
VSRC
VDIS
PD
Topr
Tj
Tstg
Rating
-0.3 to 40
-0.3 to 6
-0.3 to VIN_opr + VGS
-0.3 to VGATE
-0.3 to 40
800 (Note 1)
40 to 85
150
55 to 150
Unit
V
V
V
V
V
mW
°C
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
Note1: Rating at mounting on a board: FR4 board. ( 40 mm × 40 mm × 1.6 mm, Cu 4 layer )
Recommended Operating Conditions
Input operation voltage
Characteristics
Capacitance
CONTROL High-level input voltage
CONTROL Low-level input voltage
VIN _opr
CIN
CGATE
VIH
VIL
Symbol
Min. Typ. Max.
2.7 5.0 28
0.1 1
2000
1.6
  0.4
Unit
V
µF
pF
V
V
© 2017
Toshiba Electronic Devices & Storage Corporation
2
2017-09-19





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