MODE MOSFET. ZXMN2B03E6 Datasheet

ZXMN2B03E6 MOSFET. Datasheet pdf. Equivalent

Part ZXMN2B03E6
Description 20V SOT26 N-CHANNEL ENHANCEMENT MODE MOSFET
Feature NEW PRODUCT ZXMN2B03E6 20V SOT26 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V .
Manufacture Diodes
Datasheet
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ZXMN2B03E6
ZXMN2B03E6
20V SOT26 N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
20V
Max RDS(ON)
0.040@ VGS = 4.5V
0.055@ VGS = 2.5V
0.075@ VGS = 1.8V
Max ID
TA = +25C
5.4A
4.6A
4.0A
Description and Applications
This new generation trench MOSFET from Zetex features low on-
resistance achievable with low gate drive.
DC - DC Converters
Power Management Functions
Disconnect Switches
Motor Control
Features and Benefits
Low On-resistance
Fast Switching Speed
Low Gate Drive Capability
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.015 grams (Approximate)
SOT26
Top View
Pinout Top-view
Device Symbol
Ordering Information (Note 4)
Part Number
ZXMN2B03E6TA
Reel Size (inch)
7
Tape Width (mm)
8
Quantity Per Reel
3000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
2B3
2B3 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
Date Code Key
Year
2015
Code
C
2016
D
Month
Code
Jan Feb
12
2017
E
Mar
3
2018
F
Apr
4
2019
G
May
5
2020
H
Jun
6
2021
I
2022
J
2023
K
Jul Aug Sep Oct
78 9O
2024
L
Nov
N
2025
M
Dec
D
ZXMN2B03E6
Datasheet Number: DS33521 Rev. 2 - 2
1 of 7
www.diodes.com
March 2015
© Diodes Incorporated



ZXMN2B03E6
ZXMN2B03E6
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VGS = 4.5V
Pulsed Drain Current (Note 7)
TA = +25C (Note 6)
TA = +70C (Note 6)
TA = +25C (Note 5)
Continuous Source Current (Body Diode) (Note 6)
Pulsed Source Current (Body Diode) (Note 7)
Symbol
VDSS
VGS
ID
IDM
IS
ISM
Value
20
8
5.4
4.3
4.3
26
2.8
26
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation at TA = +25C (Note 5)
Linear derating factor (Note 5)
Power Dissipation at TA = +25C (Note 6)
Linear derating factor (Note 6)
Junction to Ambient (Note 5)
Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
PD
PD
RJA
RJA
TJ, TSTG
Value
1.1
8.8
1.7
13.7
113
73
-55 to +150
Notes:
5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR-4 PCB measured at t10 secs.
7. Repetitive rating 25mm x 25mm FR-4 PCB, D = 0.02, pulse width 300µs - pulse width limited by maximum junction temperature.
Thermal Characteristics
Unit
V
V
A
A
A
A
Unit
W
mW/C
W
mW/C
C/W
C/W
C
ZXMN2B03E6
Datasheet Number: DS33521 Rev. 2 - 2
2 of 7
www.diodes.com
March 2015
© Diodes Incorporated





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