IGBT. IGW15T120F Datasheet

IGW15T120F IGBT. Datasheet pdf. Equivalent

Part IGW15T120F
Description IGBT
Feature IGW15T120F General Description: Using advanced IGBT technology, the 1200V IGBT. Offers superior con.
Manufacture IPS
Datasheet
Download IGW15T120F Datasheet



IGW15T120F
IGW15T120F
General Description
Using advanced IGBT technology, the 1200V IGBT.
Offers superior conduction and switching performances.
Lead Free Package and Finish
VCES
1200V
VCE(sat)
2.0V
IC
15A
Features:
Low saturation voltage: VCE(sat),typ=2.0V @IC=15A, and TC = 25°C;
RoHS Compliant;
Applications:
Power switch circuit of induction cooker(IH)
Ordering Information
Part Number
Package
IGW15T120F
TO-3P
Brand
IPS
Absolute Maximum RatingsTa= 25℃,unless otherwise specified
Symbol
Parameter
Rating
VCES Collector-Emitter Voltage
1200
VGES Gate- Emitter Voltage
±20
Collector Current
IC
Collector Current
@TC=100
30
15
ICMa1
Pulsed Collector Current @TC=25
45
IF Diode Continuous Forward Current@TC=100
15
IFM Diode Maximum Forward Current
45
Power Dissipation
PD
Power Dissipation
@TC=25
@TC=100
160
65
TJ Operating Junction
150
Tstg Storage Temperature Range
-55150
TL Maximum Temperature for Soldering
300
a1Repetitive rating; pulse width limited by maximum junction temperature
Units
V
V
A
A
A
A
W
©2016 InPower Semiconductor Co., Ltd.
Page 1 of 6
IGW15T120F REV. A. Sep. 2016



IGW15T120F
IGW15T120F
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction to case for IGBT
RθJC Thermal Resistance, Junction to case for Diode
RθJA Thermal Resistance, Junction to Ambient
Typ.
0.55
1.0
35
Max.
0.8
2
40
Units
/W
/W
/W
Electrical Characteristics of the IGBT (Ta= 25, unless otherwise specified)
Symbol
Parameter
Test Conditions
Rating
Min Typ. Max.
OFF Characteristics
V(BR)CES Collector-Emitter Breakdown Voltage VGE=0V,ICE=250uA 1200 --
--
ICES Collector-Emitter Leakage Current
VGE=0V,VCE=1200V
--
-- 1.0
IGES(F) Gate to Emitter Forward Leakage
VGE=+20V
-- -- +250
IGES(R) Gate to Source Reverse Leakage
VGE =-20V
-- -- -250
ON Characteristics
VCE(sat) Collector-Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
Pulse width tp300µs,δ≤2%
IC=15A ,VGE=15V
-- 2.0 2.5
IC=250uA ,VCE=VGE 4.5 6.0 7.5
Dynamic Characteristics
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Switching Characteristics
VCE=30V,VGE=0V
f=1MHz
-- 2485 --
-- 51 --
-- 27.6 --
td(on) Turn-on Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Ets Total Switching Loss
Qg Total Gate Charge
Qge Gate to Emitter Charge
Qgc Gate to Collector Charge
Electrical Characteristics of the Diode
-- 37 --
-- 25 --
VCE=600V,IC=15A, -- 90 --
Rg=10Ω,VGE=15V,
Inductive Load,
--
93
--
Ta=25℃,
-- 0.9 --
-- 0.4 --
-- 1.3 --
-- 92 --
VCE=600V,IC=15A,
VGE=15V,
--
25
--
-- 37 --
VF Diode Forward Voltage
IF=15A
-- 1.7 --
Trr Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
IF=15A
di/dt=200A/uS
Qrr Reverse Recovery Charge
-- 253 --
-- 14 --
-- 1.8 --
Units
V
mA
nA
nA
V
V
pF
ns
mJ
nC
V
ns
A
nC
©2016 InPower Semiconductor Co., Ltd.
Page 2 of 6
IGW15T120F REV. A. Sep. 2016





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