IGBT-modules. FD1000R33HE3-K Datasheet

FD1000R33HE3-K IGBT-modules. Datasheet pdf. Equivalent

Part FD1000R33HE3-K
Description IGBT-modules
Feature FD1000R33HE3-K IHM-BModulmitschnellemTrench/FeldstoppIGBT3undEmitterControlled3Diode IHM-B.
Manufacture Infineon
Datasheet
Download FD1000R33HE3-K Datasheet



FD1000R33HE3-K
FD1000R33HE3-K
IHM-BModulmitschnellemTrench/FeldstoppIGBT3undEmitterControlled3Diode
IHM-BmodulewithfastTrench/FieldstopIGBT3andEmitterControlled3diode
PotentielleAnwendungen
• Chopper-Anwendungen
• Mittelspannungsantriebe
• Motorantriebe
• Traktionsumrichter
• USV-Systeme
• Windgeneratoren
ElektrischeEigenschaften
• GroßeDC-Festigkeit
• HoheKurzschlussrobustheit
• NiedrigeSchaltverluste
• NiedrigesVCEsat
• Tvjop=150°C
• VCEsatmitpositivemTemperaturkoeffizienten
MechanischeEigenschaften
AlSiC Bodenplatte für erhöhte thermische
Lastwechselfestigkeit
• GehäusemitCTI>600
• IHMBGehäuse
• IsolierteBodenplatte
VCES = 3300V
IC nom = 1000A / ICRM = 2000A
PotentialApplications
• Chopperapplications
• Mediumvoltageconverters
• Motordrives
• Tractiondrives
• UPSsystems
• Windturbines
ElectricalFeatures
• HighDCstability
• Highshort-circuitcapability
• Lowswitchinglosses
• LowVCEsat
• Tvjop=150°C
• VCEsatwithpositivetemperaturecoefficient
MechanicalFeatures
AlSiC base plate for increased thermal cycling
capability
• PackagewithCTI>600
• IHMBhousing
• Isolatedbaseplate
ModuleLabelCode
BarcodeCode128
DMX-Code
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
Digit
1-5
6-11
12-19
20-21
22-23
Datasheet
www.infineon.com
PleasereadtheImportantNoticeandWarningsattheendofthisdocument
V3.2
2019-07-24



FD1000R33HE3-K
FD1000R33HE3-K
IGBT,Brems-Chopper/IGBT,Brake-Chopper
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = -40°C
Tvj = 150°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 95°C, Tvj max = 150°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
VCES 
ICDC 
ICRM 
VGES 
3300
3300
1000
2000
+/-20
V
A
A
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 1000 A
VGE = 15 V
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 48,0 mA, VCE = VGE, Tvj = 25°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Gateladung
Gatecharge
VGE = -15 / 15 V, VCE = 1800 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1000 kHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1000 kHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 3300 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 1000 A, VCE = 1800 V
VGE = -15 / 15 V
RGon = 0,71 , CGE = 220 nF
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 1000 A, VCE = 1800 V
VGE = -15 / 15 V
RGon = 0,71 , CGE = 220 nF
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 1000 A, VCE = 1800 V
VGE = -15 / 15 V
RGoff = 2,3 , CGE = 220 nF
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 1000 A, VCE = 1800 V
VGE = -15 / 15 V
RGoff = 2,3 , CGE = 220 nF
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 1000 A, VCE = 1800 V, Lσ = 85 nH
di/dt = 3000 A/µs (Tvj = 150°C)
VGE = -15 / 15 V, RGon = 0,71
CGE = 220 nF
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
Kurzschlußverhalten
SCdata
IC = 1000 A, VCE = 1800 V, Lσ = 85 nH
du/dt = 2100 V/µs (Tvj = 150°C)
VGE = -15 / 15 V, RGoff = 2,3
CGE = 220 nF
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VGE 15 V, VCC = 2500 V
VCEmax = VCES -LsCE ·di/dt
tP 10 µs, Tvj = 150°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
VCE sat
min. typ. max.
2,55 3,10
3,00 3,45
3,15
V
V
V
VGEth 5,20 5,80 6,40 V
QG 28,0 µC
RGint
0,63
Cies 190 nF
Cres 4,00 nF
ICES 5,0 mA
IGES 400 nA
td on
0,35 µs
0,38 µs
0,38 µs
tr
0,35 µs
0,38 µs
0,38 µs
td off
3,00 µs
3,20 µs
3,20 µs
tf
0,30 µs
0,35 µs
0,35 µs
1250
mJ
Eon
1700
1950
mJ
mJ
1050
mJ
Eoff
1400
1550
mJ
mJ
ISC
RthJC
4300
A
11,0 K/kW
RthCH
14,5 K/kW
Tvj op
-40
150 °C
Datasheet
2 V3.2
2019-07-24





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