P-Channel MOSFET. SSG9435J-C Datasheet

SSG9435J-C MOSFET. Datasheet pdf. Equivalent

Part SSG9435J-C
Description P-Channel MOSFET
Feature Elektronische Bauelemente SSG9435J-C -5.1A, -30V, RDS(ON) 50mΩ P-Ch Enhancement Mode Power MOSFET .
Manufacture SeCoS
Datasheet
Download SSG9435J-C Datasheet



SSG9435J-C
Elektronische Bauelemente
SSG9435J-C
-5.1A, -30V, RDS(ON) 50m
P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG9435J-C is the highest performance trench
P-Ch MOSFETs with extreme high cell density, which
provide excellent RDS(ON) and gate charge for most of the
synchronous buck converter applications.
The SSG9435J-C meet the RoHS and Green Product
requirement with full function reliability approved.
FEATURES
Advanced High Cell Density Trench Technology
Super Low Gate Charge
MARKING
.Q9435
Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
4K
Leader Size
13 inch
ORDER INFORMATION
Part Number
Type
SSG9435J-C Lead (Pb)-free and Halogen-free
SOP-8
B
A
HG
LD
M
C
JK
F
N
E
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.79 6.20
4.70 5.11
3.80 4.00
0° 8°
0.40 1.27
0.10 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.33 0.51
0.375 REF.
45°REF.
1.3 1.752
0 0.25
0.25 REF.
SD
SD
SD
GD
MAXIMUM RATINGS
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1, @VGS=10V
Pulsed Drain Current 3
TA=25°C
TA=70°C
Power Dissipation
TA=25°C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PD
TJ, TSTG
Thermal Data
Thermal Resistance from Junction-Ambient 1
RθJA
Thermal Resistance from Junction-Ambient 2
Thermal Resistance from Junction-Case 1
RθJA
RθJC
http://www.SeCoSGmbH.com/
03-Jan-2018 Rev. E
Ratings
t10sec
Steady State
-30
±20
-5.1 -4.3
-4.1 -3.4
-20
2
-55~150
Unit
V
V
A
A
W
°C
t10sec, 62.5
Steady State, 89
125
25
°C/W
Any changes of specification will not be informed individually.
Page 1 of 4



SSG9435J-C
Elektronische Bauelemente
SSG9435J-C
-5.1A, -30V, RDS(ON) 50m
P-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Drain-Source Breakdown Voltage
BVDSS
-30
-
-
Gate Threshold Voltage
Forward Transconductance
VGS(th)
gfs
-1
-
-1.5
11
-2
-
Gate-Source Leakage Current
IGSS
-
- ±100
TJ=25°C
Drain-Source Leakage Current
TJ=55°C
IDSS
-
-
- -1
- -5
Static Drain-Source On-Resistance 4
RDS(ON)
-
-
- 50
- 75
Total Gate Charge
Qg - 6.4 -
Gate-Source Charge
Qgs - 2.3 -
Gate-Drain (“Miller”) Charge
Qgd - 2 -
Turn-on Delay Time
Td(on)
-
2.8
-
Rise Time
Tr - 8.4 -
Turn-off Delay Time
Fall Time
Td(off)
-
39
-
Tf - 6 -
Input Capacitance
Ciss - 585 -
Output Capacitance
Coss - 100 -
Reverse Transfer Capacitance
Continuous Source Current 1
Pulsed Source Current 3
Crss
-
85
-
Drain-Source Diode Characteristics
IS -
- -5.1
ISM -
- -20
Diode Forward Voltage 4
VSD -
- -1.2
Reverse Recovery Time
trr - 7.8 -
Reverse Recovery Charge
Qrr - 2.5 -
Notes:
1. Surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. When mounted on Min. copper pad.
3. Pulse width limited by maximum junction temperature, pulse width300µs, duty cycle2%.
4. The data tested by pulsed, pulse width300µs, duty cycle2%.
Unit
V
V
S
nA
µA
m
Test Conditions
VGS=0, ID= -250µA
VDS=VGS, ID= -250µA
VDS= -5V, ID= -4A
VGS= ±20V
VDS= -24V, VGS=0
V DS= -24V, VGS=0
VGS= -10V, ID= -4A
VGS= -4.5V,ID= -3A
ID= -4A
nC VDS= -15V
VGS= -4.5V
VDD= -15V
nS ID= -4A
VGS= -10V
RG=3.3
VGS=0
pF VDS= -15V
f=1MHz
A
V VGS=0, IS= -2.6A
TJ=25°C
nS IF= -4A
dI/dt=100A/µs
nC TJ=25°C
http://www.SeCoSGmbH.com/
03-Jan-2018 Rev. E
Any changes of specification will not be informed individually.
Page 2 of 4





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