POWER MOSFET. MJIRF4N65 Datasheet

MJIRF4N65 MOSFET. Datasheet pdf. Equivalent

Part MJIRF4N65
Description POWER MOSFET
Feature MCIRF4N65 MFIRF4N65 MKIRF4N65 MJIRF4N65 ID = 4A VDS = 650V RDS(on)MAX = 2.3Ω Major Ratings and Cha.
Manufacture Global Semiconductor
Datasheet
Download MJIRF4N65 Datasheet



MJIRF4N65
MCIRF4N65 MFIRF4N65
MKIRF4N65 MJIRF4N65
ID = 4A
VDS = 650V
RDS(on)MAX = 2.3Ω
Major Ratings and Characteristics
Characteristics
Values
Units
IDS 4 A
IDM 16 A
VDS 650 V
VGS
TJ
T storage
±30
150
-55 ~150
V
POWER MOSFET
Description/ Features
The MCIRF4N65 is used an advanced termination
scheme to provide enhanced voltage-blocking
capability without degrading performance over time.
The new energy efficient design also offers a drain-
to-source diode with a fast recovery time. Typical
applications are in switching power supplies,
converters, free-wheeling diodes, and reverse battery
protection.
150Tj operation
Low Power Loss & Low cost
Fast Switching
RoHS Compliant
Case Styles
TO-220
TO-220F
TO-252
TO-251
Ordering Information
Part Number
MCIRF4N65
MFIRF4N65
MJIRF4N65
MKIRF4N65
1GATE
2DRAIN
3SOURCE
Package
TO-220
TO-220F
TO-251
TO-252
Packaging
Tube
Tube
Tube
Tube & Tape & Reel
1 of 9



MJIRF4N65
MCIRF4N65 MFIRF4N65
MKIRF4N65 MJIRF4N65
Absolute Maximum Rating (Tamb = 25)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Pulsed
IDM
Total Dissipation
PD
Junction Temperature
Storage Temperature
Single Pulse Avalanche Energy
Electrical Characteristics(Tamb=25)
TJ
Tstg.
EAS
Value
650
±30
16
TO-220
TO-220F
TO-251
TO-252
150
-55~150
280
70
30
50
50
Unit
V
V
A
W
mJ
Characteristics
Symbol
Test Condition
MIN. MAX. Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V,ID=250uA
650
-
Gate Threshold Voltage
VGS(TH) VGS=VDS,ID=250uA
2
4
Drain-Source Leakage Current
IDSS VDS=650V, VGS=0V
-
10
Drain-Source Diode Forward Voltage
VSD
VGS=0V,IS=4A
- 1.4
Forward Trans conductance
Gfs VDS=10V, ID=2.0A 1.5
-
Gate-Body Leakage Current(Vds=0V)
IGSS
VGS=±30V
- ±100
Static Drain-Source On Resistance
RDS(ON)
VGS=10V,ID=2.0A
-
2.3
TO-220
-2
Thermal Resistance Junction-Case
RthJ-C
TO-220F
TO-251
- 2.5
- 2.32
Dynamic Characteristics(Tamb=25)
TO-252
- 2.32
Characteristics
Symbol Test Condition
MIN.
TYP. MAX.
V
V
uA
V
S
nA
Ω
/W
Unit
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
CISS
COSS
CRSS
VDS=25V,VGS=0V,
F=1.0MHz
-
-
-
558 720 pF
62 85 pF
7 10 pF
2 of 9
Rev. 1.0





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