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MFIRF7N65

Global Semiconductor

POWER MOSFET


Description
MFIRF7N65 MCIRF7N65 ID = 7.0A VDS = 650V RDS(on)MAX = 1.5Ω Major Ratings and Characteristics Characteristics Values Units ID 7.0 A IDM 28.0 A VDS 650 V VGS TJ T storage ±30 150 -55 ~150 V ℃ ℃ POWER MOSFET Description/ Features The MCIRF7N65 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading perf...



Global Semiconductor

MFIRF7N65

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