POWER MOSFET. MJIRF6N70 Datasheet

MJIRF6N70 MOSFET. Datasheet pdf. Equivalent

Part MJIRF6N70
Description POWER MOSFET
Feature MJIRF6N70 ID = 6A VDS = 700V RDS(on)MAX = 1.65Ω Major Ratings and Characteristics Characteristics.
Manufacture Global Semiconductor
Datasheet
Download MJIRF6N70 Datasheet



MJIRF6N70
MJIRF6N70
ID = 6A
VDS = 700V
RDS(on)MAX = 1.65Ω
Major Ratings and Characteristics
Characteristics
Values
Units
ID 6.0 A
IDM 24 A
VDS 700 V
VGS
TJ
T storage
±30
150
-55 ~150
V
POWER MOSFET
Description/ Features
The MJIRF6N70 is used an advanced termination
scheme to provide enhanced voltage-blocking
capability without degrading performance over time.
The new energy efficient design also offers a drain-
to-source diode with a fast recovery time. Typical
applications are in switching power supplies,
converters, free-wheeling diodes, and reverse battery
protection.
150Tj operation
Low Power Loss & Low cost
Fast Switching
RoHS Compliant
Case Styles
Ordering Information
Part Number
MJIRF6N70
1GATE
2DRAIN
3SOURCE
Package
TO-251
Packaging
Tube
1 of 6



MJIRF6N70
MJIRF6N70
Absolute Maximum Rating (Tamb = 25)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Pulsed
IDM
Total Dissipation
PD
Junction Temperature
TJ
Storage Temperature
Tstg.
Single Pulse Avalanche Energy
Electrical Characteristics(Tamb=25)
EAS
Value
700
±30
24
90
150
-55~150
410
Unit
V
V
A
W
mJ
Characteristic
Symbol
Test Condition
MIN. MAX. Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V,ID=250uA
700
-
Gate Threshold Voltage
VGS(TH) VGS=VDS,ID=250uA
2
4
Drain-Source Leakage Current
IDSS VDS=700V, VGS=0V
-
10
Drain-Source Diode Forward Voltage
VSD
VGS=0V,IS=6A
- 1.4
Forward Trans conductance
Gfs VDS=10V, ID=3.0A
2
-
Gate-Body Leakage Current(Vds=0V)
IGSS
VGS=±30V
- ±100
Static Drain-Source On Resistance
RDS(ON)
VGS=10V,IS=3.0A
- 1.65
Thermal Resistance Junction-Case
Dynamic Characteristics(Tamb=25)
RthJ-C
-
- 1.3
Characteristic
Symbol Test Condition
MIN.
TYP. MAX.
V
V
uA
V
S
nA
Ω
/W
Unit
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
CISS
COSS
CRSS
VDS=25V,VGS=0V,
F=1.0MHz
-
-
-
900 1100 pF
82 105 pF
4.0 7.0 pF
2 of 6
Rev. 1.0





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