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MJIRF6N70

Global Semiconductor

POWER MOSFET


Description
MJIRF6N70 ID = 6A VDS = 700V RDS(on)MAX = 1.65Ω Major Ratings and Characteristics Characteristics Values Units ID 6.0 A IDM 24 A VDS 700 V VGS TJ T storage ±30 150 -55 ~150 V ℃ ℃ POWER MOSFET Description/ Features The MJIRF6N70 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over ...



Global Semiconductor

MJIRF6N70

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