4Gb D-die. M391A1G43DB1 Datasheet

M391A1G43DB1 D-die. Datasheet pdf. Equivalent

Part M391A1G43DB1
Description 288pin ECC Unbuffered DIMM based on 4Gb D-die
Feature Rev. 1.5, Jun. 2016 M391A1G43DB0 M391A1G43DB1 288pin ECC Unbuffered DIMM based on 4Gb D-die 78FBGA w.
Manufacture Samsung
Datasheet
Download M391A1G43DB1 Datasheet



M391A1G43DB1
Rev. 1.5, Jun. 2016
M391A1G43DB0
M391A1G43DB1
288pin ECC Unbuffered DIMM
based on 4Gb D-die
78FBGA with Lead-Free & Halogen-Free
(RoHS compliant)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All information discussed
herein is provided on an "AS IS" basis, without warranties of any kind.
This document and all information discussed herein remain the sole and exclusive property of Samsung
Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property
right is granted by one party to the other party under this document, by implication, estoppel or other-
wise.
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or
similar applications where product failure could result in loss of life or personal or physical harm, or any
military or defense application, or any governmental procurement to which special terms or provisions
may apply.
For updates or additional information about Samsung products, contact your nearest Samsung office.
All brand names, trademarks and registered trademarks belong to their respective owners.
2016 Samsung Electronics Co., Ltd.GG All rights reserved.
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M391A1G43DB1
ECC Unbuffered DIMM
datasheet
Revision History
Revision No.
1.0
1.1
1.2
1.21
1.3
1.31
1.4
1.41
1.5
History
- First SPEC. Release
- Change of Speed Bins and CL, tRCD, tRP, tRC and tRAS for corre
sponding bin on page 27~30
- Change of [Table 27] Timing Parameters by Speed Grade on page
32~36
- Change of Part Number (Speed bin "RC")
- Addition of VDDSPD tolerance on page 9
- Addition of IDD value (IDD6R, IDD6A) on page 24
- Change of IDD7 value [2133 (13-13-13)] on page 24
- Correction of Typo
- Change of VDDSPD tolerance on page 9
- Correction of Typo
- Change of Physical Dimensions on page 37
Draft Date
Sep.2014
Sep.2014
Jan.2015
Mar.2015
Apr.2015
28th May.2015
5th Nov.2015
2nd Jun.2016
21th Jun.2016
Rev. 1.5
DDR4 SDRAM
Remark
-
Editor
J.Y.Lee
J.Y.Lee
J.Y.Lee
J.Y.Lee
J.Y.Lee
J.Y.Lee
J.Y.Lee
J.Y.Lee
J.Y.Lee
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