CM1800HCB-34N

High Voltage Insulated Gate Bipolar Transistor

Transistor：HVIGBT > CM1800HCB-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM2400HCB-34N  IC ·························································· 1800 A  VCES ···················································· 1700 V  1-element in ...

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Mitsubishi

Download CM1800HCB-34N Datasheet

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• CM1800HCB-34N High Voltage Insulated Gate Bipolar Transistor - Mitsubishi

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