HYG022N03LQ1D/U/V
N-Channel Enhancement Mode MOSFET
Feature
z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V
z 100% Avalanche Tested z Reliable and Rugged z Halogen Free and Green Devices Available
(RoHS Compliant)
Pin Description
GDS
GDS
GDS
TO-252-2L TO-251-3L
TO-251-3S
Applications
z Switching Application z Power Manage...