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HYG080N03LA1S

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N-Channel MOSFET

Description
HYG080N03LA1S N-Channel Enhancement Mode MOSFET Feature  30V/12A RDS(ON)=7.3mΩ(typ.)@VGS = 10V RDS(ON)=10.1mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description SOP8L Applications  Power Management for DC/DC  Switching Application  Battery Protection Ordering and ...


HUAYI

HYG080N03LA1S

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