DatasheetsPDF.com

PESD3V3S1BA-N

BORN

ESD Protection Diode


Description
»Features ■ 100Watts peak pulse power (tp =8/20μs) ■ Bidirectional configurations ■ Solid-state silicon-avalanche technology ■ Low clamping voltage ■ Low leakage current ■ IEC 61000-4-2 ±25kV contact ±25kV air ■ IEC 61000-4-4 (EFT) 40A(5/50ns) ■ IEC 61000-4-5 (Lightning) 10A(8/20μs) PESD3V3S1BA-N ESD Protection Diode »Applications ■ Microprocessor based eq...



BORN

PESD3V3S1BA-N

File Download Download PESD3V3S1BA-N Datasheet


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)