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T2N7002AK

Toshiba
Part Number T2N7002AK
Manufacturer Toshiba
Description Silicon N-Channel MOS Type Field-Effect Transistor
Published Apr 23, 2019
Detailed Description T2N7002AK TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type T2N7002AK ○ High Speed Switching Applications • E...
Datasheet PDF File T2N7002AK PDF File

T2N7002AK
T2N7002AK


Overview
T2N7002AK TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type T2N7002AK ○ High Speed Switching Applications • ESD protected gate • Low ON-resistance RDS(on) = 2.
8 Ω (typ.
) (@VGS = 10 V) RDS(on) = 3.
1 Ω (typ.
) (@VGS = 5 V) RDS(on) = 3.
2 Ω (typ.
) (@VGS = 4.
5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain–source voltage Gate–source voltage Drain current (Note1) DC Pulse Power dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID IDP (Note 2) PD (Note 3) PD (Note 4) Tch Tstg Rating 60 ± 20 200 760 320 1000 150 −55 to 150 Unit V V mA mW °C °C SOT23 1.
Gate 2.
Source 3.
Drain Note: Using continuously under heavy loads (e.
g.
the application of h...



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