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TP90H180PS

Transphorm
Part Number TP90H180PS
Manufacturer Transphorm
Description 900V GaN FET
Published Apr 29, 2019
Detailed Description TP90H180PS 900V GaN FET in TO-220 (source tab) Description The TP90H180PS 900V, 170mΩ Gallium Nitride (GaN) FET is a n...
Datasheet PDF File TP90H180PS PDF File

TP90H180PS
TP90H180PS

Overview
TP90H180PS 900V GaN FET in TO-220 (source tab) Description The TP90H180PS 900V, 170mΩ Gallium Nitride (GaN) FET is a normally-off device.
It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
Related Literature  AN0009: Recommended External Circuitry for GaN FETs  AN0003: Printed Circuit Board Layout and Probing  AN0010: Paralleling GaN FETs Ordering Information Part Number Package TP90H180PS 3 lead TO-220 TP90H180PS TO-220 (top view) S Package Configura...


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