650 V power Schottky silicon carbide diode
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• No or negligible reverse recovery
• Switching behavior independent of temperature
• Dedicated to PFC applications
• High forward surge capability
• Operating Tj from -40 °C to 175 °C
• ECOPACK® 2 compliant
• Power efficient product
• DC/DC converter
• High frequency inverter
• Boost PFC function
The SiC diode is an ultra high performance power Schottky diode. It is manufactured
using a silicon carbide substrate. The wide band gap material allows the design of a
Schottky diode structure with a 650 V rating. Due to the Schottky construction, no
recovery is shown at turn-off and ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, this ST SiC diode will boost
performance in hard switching conditions. Its high forward surge capability ensures
good robustness during transient phases.
DS11623 - Rev 2 - July 2018
For further information contact your local STMicroelectronics sales office.