Fast Rectifier. VS-6DKH02HM3 Datasheet

VS-6DKH02HM3 Rectifier. Datasheet pdf. Equivalent


Vishay VS-6DKH02HM3
www.vishay.com
VS-6DKH02HM3
Vishay Semiconductors
Hyper Fast Rectifier, 2 x 3 A FRED Pt®
8
7
6
5
FlatPAK 5 x 6
1, 2 7, 8
3, 4 5, 6
1
2
3
4
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr (typ.)
TJ max.
Diode variation
FlatPAK 5 x 6
2x3A
200 V
0.71 V
25 ns
175 °C
Separated cathode
FEATURES
• Hyper fast recovery time, reduced Qrr, and
soft recovery
Available
• 175 °C maximum operating junction
temperature
• Specific for output and snubber operation
• Low forward voltage drop
• Low leakage current
• AEC-Q101 qualified
• Meets MSL level 1 per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyper fast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyper fast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in snubber, boost,
piezo-injection, as high frequency rectifiers, and
freewheeling diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
MECHANICAL DATA
Case: FlatPAK 5 x 6
Molding compound meets UL 94 V-0 flammability rating
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per J-STD-002
and JESD 22-B102
HM3 suffix meets JESD 201 class 2 whisker test
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
SYMBOL
VRRM
Average rectified forward current
per device
IF(AV)
Non-repetitive peak surge current
per device
per diode
Operating junction and storage temperatures
IFSM
TJ, TStg
TEST CONDITIONS
TSolderpad = 170 °C, DC
TSolderpad = 169 °C, D = 0.5
TJ = 25 °C, 10 ms sinusoidal pulse
VALUES
200
6
173
87
-55 to +175
UNITS
V
A
°C
Revision: 04-May-17
1 Document Number: 96086
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


VS-6DKH02HM3 Datasheet
Recommendation VS-6DKH02HM3 Datasheet
Part VS-6DKH02HM3
Description Hyper Fast Rectifier
Feature VS-6DKH02HM3; www.vishay.com VS-6DKH02HM3 Vishay Semiconductors Hyper Fast Rectifier, 2 x 3 A FRED Pt® 8 7 6 5 .
Manufacture Vishay
Datasheet
Download VS-6DKH02HM3 Datasheet




Vishay VS-6DKH02HM3
www.vishay.com
VS-6DKH02HM3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
Forward voltage, per diode
IF = 3 A
VF
IF = 3 A, TJ = 150 °C
Reverse leakage current, per diode
VR = VR rated
IR
TJ = 150 °C, VR = VR rated
Junction capacitance
CT VR = 200 V
MIN.
200
-
-
-
-
-
TYP.
-
0.88
0.71
-
2
14
MAX.
-
0.94
0.74
2
40
-
UNITS
V
μA
pF
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
-
20
Reverse recovery time
IF = 0.5 A, IR = 1 A, Irr = 0.25 A
trr
TJ = 25 °C
--
- 15
Peak recovery current
Reverse recovery charge
IRRM
Qrr
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
IF = 3 A
dIF/dt = 200 A/μs
VR = 160 V
-
-
-
-
-
25
2
3
12
40
MAX.
-
25
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL TEST CONDITIONS
MIN.
TYP.
Maximum junction and storage temperature range
Thermal resistance, junction to ambient, per diode
Thermal resistance, junction to case, per diode
TJ, TStg
RthJA (1)(2)
RthJC (3)
-55 -
- 90
- 2.3
Notes
(1) The heat generated must be less than the thermal conductivity from junction to ambient: dPD/dTJ < 1/ RthJA
(2) Free air, mounted or recommended copper pad area; thermal resistance RthJA - junction to ambient
(3) Mounted on infinite heatsink
MAX.
175
103
2.6
UNITS
°C
°C/W
Revision: 04-May-17
2 Document Number: 96086
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay VS-6DKH02HM3
www.vishay.com
100
10
TJ = 175 °C
1
0.1
0.2
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.4 0.6 0.8 1.0 1.2 1.4
VF - Forward Voltage Drop (V)
1.6
Fig. 1 - Typical Forward Voltage Drop Characteristics
100
VS-6DKH02HM3
Vishay Semiconductors
100
TJ = 175 °C
10 TJ = 150 °C
1
TJ = 125 °C
0.1
0.01
0.001
TJ = 25 °C
0.0001
0
50 100 150
VR - Reverse Voltage (V)
200
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
10
0
50 100 150
VR - Reverse Voltage (V)
200
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1000
100
10
1
0.1
0.01
0.00001
0.0001
Junction to ambient
Junction to case
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
100
1000
Revision: 04-May-17
3 Document Number: 96086
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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