Epitaxial Transistor. BCP56-16T1 Datasheet

BCP56-16T1 Transistor. Datasheet pdf. Equivalent


Motorola BCP56-16T1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCP56T1/D
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in audio amplifier
applications. The device is housed in the SOT-223 package, which is designed for
medium power surface mount applications.
High Current: 1.0 Amp
The SOT-223 package can be soldered using wave or reflow. The formed leads
absorb thermal stress during soldering, eliminating the possibility of damage to
the die
Available in 12 mm Tape and Reel
Use BCP56T1 to order the 7 inch/1000 unit reel
Use BCP56T3 to order the 13 inch/4000 unit reel
COLLECTOR 2,4
PNP Complement is BCP53T1
BASE
1
EMITTER 3
BCP56T1
SERIES
Motorola Preferred Device
MEDIUM POWER
NPN SILICON
HIGH CURRENT
TRANSISTOR
SURFACE MOUNT
4
1
2
3
CASE 318E-04, STYLE 1
TO-261AA
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
80 Vdc
100 Vdc
5 Vdc
1 Adc
1.5 Watts
12 mW/°C
Operating and Storage Temperature Range
DEVICE MARKING
TJ, Tstg
– 65 to 150
°C
BCP56T1 = BH
BCP56-10T1 = BK
BCP56-16T1 = BL
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance
Junction-to-Ambient (surface mounted)
RθJA 83.3 °C/W
Maximum Temperature for Soldering Purposes
Time in Solder Bath
TL 260 °C
10 Sec
1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoottoorroollaa, ISncm. 1a9l9l–6Signal Transistors, FETs and Diodes Device Data
1


BCP56-16T1 Datasheet
Recommendation BCP56-16T1 Datasheet
Part BCP56-16T1
Description NPN Silicon Epitaxial Transistor
Feature BCP56-16T1; MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCP56T1/D NPN Silicon Epitaxial Trans.
Manufacture Motorola
Datasheet
Download BCP56-16T1 Datasheet




Motorola BCP56-16T1
BCP56T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
V(BR)CBO
100
— Vdc
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
80
— Vdc
Emitter-Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
V(BR)EBO
5.0
— Vdc
Collector-Base Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
— 100 nAdc
Emitter-Base Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
10 µAdc
ON CHARACTERISTICS (2)
DC Current Gain
(IC = 5.0 mA, VCE = 2.0 V)
(IC = 150 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
hFE —
All Part Types
25 — —
BCP56T1
40 — 250
BCP56-10T1
63 — 160
BCP56-16T1
100 — 250
All Types
25 — —
Collector-Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
— 0.5 Vdc
Base-Emitter On Voltage
(IC = 500 mAdc, VCE = 2.0 Vdc)
VBE(on)
— 1.0 Vdc
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 35 MHz)
fT — 130 — MHz
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data



Motorola BCP56-16T1
TYPICAL ELECTRICAL CHARACTERISTICS
BCP56T1 SERIES
1000
TJ = 125°C
TJ = 25°C
100
TJ = – 55°C
10
1 10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
1000
100
10
1.0 10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 2. Current-Gain — Bandwidth Product
80
60
TJ = 25°C
40 Cibo
20
10
8.0
6.0
4.0
0.1
0.2
Cobo
0.5 1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
50 100
1.0
TJ = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
0
0.5
VCE(sat) @ IC/IB = 10
1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
500
1.0
0.8
0.6
IC = 10 mA
50
mA
100 mA
0.4
TJ = 25°C
250 mA 500 mA
0.2
0
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (mA)
20
Figure 5. Collector Saturation Region
50
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3







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