Planar Transistor. TSA1765 Datasheet

TSA1765 Transistor. Datasheet pdf. Equivalent

TSA1765 Datasheet
Recommendation TSA1765 Datasheet
Part TSA1765
Description High Voltage PNP Epitaxial Planar Transistor
Feature TSA1765; TSA1765 High Voltage PNP Epitaxial Planar Transistor SOT-223 Pin Definition: 1. Base 2. Collector .
Manufacture Taiwan Semiconductor
Datasheet
Download TSA1765 Datasheet




Taiwan Semiconductor TSA1765
TSA1765
High Voltage PNP Epitaxial Planar Transistor
SOT-223
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BVCBO
BVCEO
IC
VCE(SAT)
-560V
-560V
-150mA
-0.5V @ IC=-50mA,IB=-10mA
Features
Low Saturation Voltages
High Breakdown Voltage
Structure
Epitaxial Planar Type
PNP Silicon Transistor
Ordering Information
Part No.
Package
Packing
TSA1765CW RPG SOT-223 2.5Kpcs / 13” Reel
Note: “G” denotes for Halogen Free
Absolute Maximum Rating (Ta = 25°C unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
Collector Current(Pulse)
ICP
Base Current
IB
Total Power Dissipation @ TC=25ºC
Ptot
Operating Junction Temperature
TJ
Operating Junction and Storage Temperature Range
TSTG
Limit
-560
-560
-7
-150
-500
-50
2
+150
- 55 to +150
Unit
V
V
V
mA
W
°C
°C
Electrical Specifications (Ta = 25°C unless otherwise noted)
Parameter
Conditions
Symbol
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
IC = -1mA, IE = 0
IC = -1mA, IB = 0
IE = -10uA, IC = 0
VCB = -560V, IE = 0
VEB = -7V, IC = 0
IC = -20mA, IB = -2mA
IC = -50mA, IB = -10mA
IC = -50mA, IB = -10mA
VCE = -10V, IC = -50mA
VCE = -10V, IC = -1mA
VCE = -10V, IC = -50mA
VCE = -10V, IC = -100mA
VCE = -20V, IE=-10mA
VCB = -20V, f=1MHz
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(SAT) 1
VCE(SAT) 2
VBE(SAT) 1
VBE(ON)
hFE 1
hFE 2
hFE 3
fT
Cob
Min
-560
-560
-7
--
--
--
--
--
--
150
80
--
50
--
Typ
--
--
--
--
--
--
--
--
--
--
--
15
--
--
Max
--
--
--
-100
-100
-0.2
-0.5
-1.0
-1.0
--
300
--
--
8
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
Document Number: DS_P0000259
1
Version: D15



Taiwan Semiconductor TSA1765
TSA1765
High Voltage PNP Epitaxial Planar Transistor
Electrical Characteristics Curve (Ta = 25°C, unless otherwise noted)
Figure 1. Static Characteristics
Figure 2. DC Current Gain
Figure 3. VCE(SAT) v.s. VBE(SAT)
Figure 4. Power Derating
Figure 5. Safety Operation Area
Document Number: DS_P0000259
2
Version: D15



Taiwan Semiconductor TSA1765
TSA1765
High Voltage PNP Epitaxial Planar Transistor
SOT-223 Mechanical Drawing
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
S =May T =Jun U =Jul V =Aug
W =Sep X =Oct Y =Nov Z =Dec
L = Lot Code
Unit: Millimeters
Document Number: DS_P0000259
3
Version: D15







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