Schottky Rectifier. TSF10H200C Datasheet

TSF10H200C Rectifier. Datasheet pdf. Equivalent

TSF10H200C Datasheet
Recommendation TSF10H200C Datasheet
Part TSF10H200C
Description Trench Schottky Rectifier
Feature TSF10H200C; TSF10H100C thru TSF10H200C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trenc.
Manufacture Taiwan Semiconductor
Datasheet
Download TSF10H200C Datasheet




Taiwan Semiconductor TSF10H200C
TSF10H100C thru TSF10H200C
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters,
lighting and on-board DC/DC converters.
ITO-220AB
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 0.56 Nm max.
Weight: 1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward
rectified current
per device
per diode
SYMBOL
VRRM
IF(AV)
TSF10H
100C
100
TSF10H
TSF10H
120C
120
150C
150
10
5
TSF10H
200C
200
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load per diode
IFSM
100
Voltage rate of change (Rated VR)
dV/dt
10000
TYP MAX TYP MAX TYP MAX TYP MAX
Instantaneous forward
voltage per diode (Note1)
IF = 5A
IF = 5A
TJ = 25°C
TJ = 125°C
VF
Instantaneous reverse current per
diode at rated reverse voltage
TJ = 25°C
TJ = 125°C
IR
Typical thermal resistance per diode
RθJC
Operating junction temperature range
TJ
Storage temperature range
TSTG
Note 1: Pulse test with pulse width=300μs, 1% duty cycle
0.62 0.70 0.66 0.74 0.78 0.88 0.81 0.91
0.55 0.63 0.58 0.66 0.64 0.72 0.67 0.75
- 100 - 100 - 100 - 100
- 15 - 15 1.5 10 1.5 10
4
- 55 to +150
- 55 to +150
UNIT
V
A
A
V/μs
V
μA
mA
°C/W
°C
°C
Document Number: DS_D1411070
Version: H14



Taiwan Semiconductor TSF10H200C
TSF10H100C thru TSF10H200C
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PACKING CODE
PACKING CODE
SUFFIX
TSF10HXXXC
(Note 1)
C0
G
Note 1: "XXX" defines voltage from 100V (TSF10H100C) to 200V (TSF10H200C)
PACKAGE
ITO-220AB
PACKING
50 / Tube
EXAMPLE
PREFERRED
PART NO.
TSF10H150C C0G
PART NO.
TSF10H150C
PACKING CODE
C0
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
RATINGS AND CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
FIG. 1 FORWARD CURRENT DERATING CURVE
12
10
8
6
4
WITH HEATSINK
3in x 5in x 0.25in
2 Al-Plate
0
0 25 50 75 100 125 150
CASE TEMPERATURE (oC)
FIG. 2 TYPICAL FORWARD CHARACTERISTICS
100
TSF10H100C
10 TJ=150oC
1 TJ=125oC
0.1
TJ=100oC
TJ=25oC
0.01
0.0
0.2 0.4 0.6 0.8
FORWARD VOLTAGE (V)
1.0
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
100
TSF10H120C
10
TJ=150oC
1 TJ=125oC
0.1
TJ=100oC
TJ=25oC
0.01
0
0.2 0.4 0.6 0.8
FORWARD VOLTAGE (V)
1
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
100
TSF10H150C
10 TJ=150oC
1 TJ=125oC
0.1
TJ=100oC
TJ=25oC
0.01
0
0.2 0.4 0.6 0.8
FORWARD VOLTAGE (V)
1
Document Number: DS_D1411070
Version: H14



Taiwan Semiconductor TSF10H200C
TSF10H100C thru TSF10H200C
Taiwan Semiconductor
FIG. 5 TYPICAL FORWARD CHARACTERISTICS
100
TSF10H200C
10
1
0.1
0.01
0
TJ=150oC
TJ=125oC
TJ=100oC
TJ=25oC
0.2 0.4 0.6 0.8
FORWARD VOLTAGE (V)
1
FIG. 7 TYPICAL REVERSE CHARACTERISTICS
100
TSF10H120C
10
1
0.1
0.01
TJ=150oC
TJ=125oC
TJ=100oC
0.001
0.0001
TJ=25oC
0.00001
10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 9 TYPICAL REVERSE CHARACTERISTICS
100
TSF10H200C
10
1
0.1
0.01
TJ=150oC
TJ=125oC
TJ=100oC
0.001
0.0001
TJ=25oC
0.00001
10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1411070
FIG. 6 TYPICAL REVERSE CHARACTERISTICS
100
TSF10H100C
10
TJ=150oC
1 TJ=125oC
0.1 TJ=100oC
0.01
0.001
0.0001
TJ=25oC
0.00001
10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 8 TYPICAL REVERSE CHARACTERISTICS
100
TSF10H150C
10
1
0.1
0.01
TJ=150oC
TJ=125oC
TJ=100oC
0.001
0.0001
TJ=25oC
0.00001
10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
10000
1000
FIG. 10 TYPICAL JUNCTION CAPACITANCE
TSF10H100C
TSF10H120C
f=1.0MHz
Vsig=50mVp-p
100
10
0.1
TSF10H150C
TSF10H200C
1 10
REVERSE VOLTAGE (V)
100
Version: H14







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