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SSM6N815R

Toshiba
Part Number SSM6N815R
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published May 20, 2019
Detailed Description MOSFETs Silicon N-Channel MOS SSM6N815R 1. Applications • Power Management Switches 2. Features (1) 4.0 V drive (2) Low ...
Datasheet PDF File SSM6N815R PDF File

SSM6N815R
SSM6N815R

Overview
MOSFETs Silicon N-Channel MOS SSM6N815R 1.
Applications • Power Management Switches 2.
Features (1) 4.
0 V drive (2) Low drain-source on-resistance : RDS(ON) = 115 mΩ (typ.
) (@VGS = 4.
0 V) RDS(ON) = 101 mΩ (typ.
) (@VGS = 4.
5 V) RDS(ON) = 84 mΩ (typ.
) (@VGS = 10 V) 3.
Packaging and Pin Assignment TSOP6F SSM6N815R 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 ©2017 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2017-09 2017-08-29 Rev.
1.
0 SSM6N815R 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) (Q1,Q2 Common) Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V Gate-source voltage VGSS ...


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