DESCRIPTION
The SSF2318E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operate with gate voltages as low as 2.5V.
SSF2318E
20V N-Channel MOSFET
FEATURES
● VDS = 20V,ID =6.5A RDS(ON) < 34mΩ @ VGS=1.8V RDS(ON) < 26mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V
ESD Rating：2000V HBM
● High Power and Current Handling Capability ● Le...
