clamped IGBT. STGB25N40LZAG Datasheet

STGB25N40LZAG IGBT. Datasheet pdf. Equivalent

STGB25N40LZAG Datasheet
Recommendation STGB25N40LZAG Datasheet
Part STGB25N40LZAG
Description Automotive-grade 400 V internally clamped IGBT
Feature STGB25N40LZAG; STGB25N40LZAG, STGD25N40LZAG Datasheet Automotive-grade 400 V internally clamped IGBT ESCIS 320 mJ .
Manufacture STMicroelectronics
Datasheet
Download STGB25N40LZAG Datasheet




STMicroelectronics STGB25N40LZAG
STGB25N40LZAG,
STGD25N40LZAG
Datasheet
Automotive-grade 400 V internally clamped IGBT ESCIS 320 mJ
TAB TAB
2
1
D2PAK
3
23
1
DPAK
C (2 or TAB)
G (1)
RG
RGE
Features
• AEC-Q101 qualified
• SCIS energy of 320 mJ @ TJ = 25 °C
• Parts are 100% tested in SCIS
• ESD gate-emitter protection
• Gate-collector high voltage clamping
• Logic level gate drive
• Very low saturation voltage
• High pulsed current capability
• Gate and gate-emitter resistor
Applications
• Automotive ignition coil driver circuit
E (3)
IGBTG1C2TABE3ESD
Product status
STGB25N40LZAG
STGD25N40LZAG
Product summary
Order code
STGB25N40LZAG
Marking
GB25N40LZ
Package
D²PAK
Packing
Tape and reel
Order code
STGD25N40LZAG
Marking
GD25N40LZ
Package
DPAK
Packing
Tape and reel
Description
This application-specific IGBT utilizes the most advanced PowerMESH™ technology
optimized for coil driving in the harsh environment of automotive ignition systems.
These devices show very low on-state voltage and very high SCIS energy capability
over a wide operating temperature range. Moreover, ESD-protected logic level gate
input and an integrated gate resistor means no external protection circuitry is
required.
DS12284 - Rev 3 - February 2018
For further information contact your local STMicroelectronics sales office.
www.st.com/



STMicroelectronics STGB25N40LZAG
STGB25N40LZAG, STGD25N40LZAG
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGE = 0 V)
VCES(clamped)
V
VECS
Emitter-collector voltage (VGE = 0 V)
20 V
Continuous collector current at TC = 25 °C, VGE = 4 V
IC
Continuous collector current at TC = 100 °C, VGE = 4 V
25 A
25 A
ICP (1)
Pulsed collector current
50 A
VGE Gate-emitter voltage
VGE(clamped)
V
PTOT
Total dissipation at TC = 25 °C
150 W
ESCIS_25 (2) Self clamping inductive switching energy
320 mJ
ESCIS_150 (3) Self clamping inductive switching energy @ TJ = 150 °C
180 mJ
ESD
Human body model, R = 1.5 kΩ, C = 100 pF
Charged device model
4 kV
2 kV
TSTG
TJ
Storage temperature range
Operating junction temperature range
- 55 to 175
°C
1. Pulse width limited by maximum junction temperature.
2. Starting Tj = 25 °C, L = 3 mH, Rg = 1 kΩ, Vcc = 50 V during inductor charging and Vcc = 0 V during the time in clamp. Parts
are 100% electrically tested in production.
3. Starting Tj = 150 °C, L = 3 mH, Rg = 1 kΩ, Vcc = 50 V during inductor charging and Vcc = 0 V during the time in clamp.
Symbol
Parameter
Table 2. Thermal data
Rthj-case
Rthj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
D²PAK
DPAK
1
62.5 100
Unit
°C/W
°C/W
DS12284 - Rev 3
page 2/20



STMicroelectronics STGB25N40LZAG
STGB25N40LZAG, STGD25N40LZAG
Electrical characteristics
2 Electrical characteristics
TC = 25 °C unless otherwise specified
Table 3. Static characteristics
Symbol Parameter
Test conditions
Min. Typ. Max. Unit
IC = 2 mA, VGE = 0 V
VCES(clamped) Collector-emitter clamped voltage
IC = 2 mA, VGE = 0 V, Tj = - 40 °C to 175 °C
400
375 435
V
V
V(BR)ECS
Emitter-collector break-down
voltage
IC = 75 mA, VGE = 0 V
20 V
VGE(clamped) Gate-emitter clamped voltage
IG = ±2 mA, Tj= - 40 °C to 175 °C
12 16 V
VCE(sat)
Collector-emitter saturation
voltage
VGE = 4 V, IC = 6 A
VGE = 4.5 V, IC = 10 A, TJ = 175 °C
1.1 1.25
1.25 1.55
V
V
VGE(th)
Gate-threshold voltage
VGE = VCE, IC = 1 mA
VGE = VCE, IC = 1 mA, TJ = 175 °C
1.3 1.7 2.1
1.05
V
V
ICES
Collector cut-off current
VCE = 15 V, VGE = 0 V, TJ = 175 °C
VCE = 200 V, VGE = 0 V, TJ = 175 °C
20 µA
100 µA
IGES
Gate-emitter leakage current
VGE = ±10 V, VCE = 0 V
625 µA
VGE = ±10 V, VCE = 0 V, TJ = -40 °C to 175 °C 450
900 µA
RGE Gate emitter resistance
11 16 22 kΩ
RG Gate resistance
120 Ω
Table 4. Dynamic characteristics
Symbol Parameter
Cies Input capacitance
Coes Output capacitance
Cres Reverse transfer capacitance
Qg Total gate charge
Test conditions
VCE = 25 V, f = 1 MHz, VGE = 0 V
VCE = 13 V, IC = 10 A, VGE = 0 to 5 V
Min.
-
-
-
-
Typ.
1011
87
14
26
Max.
-
-
-
-
Unit
pF
nC
Table 5. Resistive load switching characteristics
Symbol
td(on)
Parameter
Turn-on delay time
tr Current rise time
td(on) Turn-on delay time
tr Current rise time
Test conditions
VCC = 14 V, VGE = 5 V, RL= 1 Ω, RG = 1 kΩ
(see Figure 17. Test circuit for resistive load
switching)
VCC = 14 V, VGE = 5 V, RL= 1 Ω, RG = 1 kΩ,
TJ = 150 °C
(see Figure 17. Test circuit for resistive load
switching)
Min. Typ. Max. Unit
- 1.1 - μs
- 3.6 - μs
- 1.06 -
μs
- 3.5 - μs
DS12284 - Rev 3
page 3/20







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