Trench MOSFET. PMCM4402UPE Datasheet

PMCM4402UPE MOSFET. Datasheet pdf. Equivalent

PMCM4402UPE Datasheet
Recommendation PMCM4402UPE Datasheet
Part PMCM4402UPE
Description P-channel Trench MOSFET
Feature PMCM4402UPE; PMCM4402UPE 20 V, P-channel Trench MOSFET 30 May 2017 Product data sheet 1. General description P-.
Manufacture nexperia
Datasheet
Download PMCM4402UPE Datasheet




nexperia PMCM4402UPE
PMCM4402UPE
20 V, P-channel Trench MOSFET
30 May 2017
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size
Package (WLCSP) using Trench MOSFET technology.
2. Features and benefits
Low threshold voltage
Ultra small package 0.78 x 0.78 x 0.35 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
Battery switch
High-speed line driver
High-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; ID = -3 A; Tj = 25 °C
Min Typ Max
- - -20
-8 -
8
[1] - - -4.2
- 65 80
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Unit
V
V
A



nexperia PMCM4402UPE
Nexperia
PMCM4402UPE
20 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
A1 G
gate
A2 S
source
B1 D
drain
B2 S
source
Simplified outline
12
A
B
Graphic symbol
D
G
Transparent top view
WLCSP4 (WLCSP4_2-2)
S
017aaa259
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMCM4402UPE
WLCSP4
Description
wafer level chip-size package; 4 bumps (2 x 2)
Version
WLCSP4_2-2
7. Marking
Table 4. Marking codes
Type number
PMCM4402UPE
Marking code
U
PIN A1
INDICATION
2
1
Fig. 1. WLCSP4 marking code description
AB
Top view, balls down
MARKING CODE
(EXAMPLE)
aaa-012880
PMCM4402UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
30 May 2017
© Nexperia B.V. 2017. All rights reserved
2 / 15



nexperia PMCM4402UPE
Nexperia
PMCM4402UPE
20 V, P-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min Max
VDS
drain-source voltage
Tj = 25 °C
- -20
VGS gate-source voltage
-8 8
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
[1] -
-4.2
VGS = -4.5 V; Tamb = 25 °C
[1] -
-3.3
VGS = -4.5 V; Tamb = 100 °C
[1] -
-2.1
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
- -13
Ptot total power dissipation Tamb = 25 °C
[2] -
400
[1] -
1.3
Tsp = 25 °C
- 12.5
Tj junction temperature
-55 150
Tamb
ambient temperature
-55 150
Tstg storage temperature
-65 150
Source-drain diode
IS
source current
Tamb = 25 °C
[1] -
-1.2
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 Printed Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Unit
V
V
A
A
A
A
mW
W
W
°C
°C
°C
A
120
017aaa123
120
017aaa124
Pder
(%)
Ider
(%)
80 80
40 40
0
- 75
- 25
25
75 125 175
Tj (°C)
Fig. 2. Normalized total power dissipation as a
function of junction temperature
0
- 75
- 25
25
75 125 175
Tj (°C)
Fig. 3. Normalized continuous drain current as a
function of junction temperature
PMCM4402UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
30 May 2017
© Nexperia B.V. 2017. All rights reserved
3 / 15







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