Power Module. BM63767S-VA Datasheet

BM63767S-VA Module. Datasheet pdf. Equivalent

BM63767S-VA Datasheet
Recommendation BM63767S-VA Datasheet
Part BM63767S-VA
Description 600V IGBT Intelligent Power Module
Feature BM63767S-VA; Datasheet Inverter for motor control 600V IGBT Intelligent Power Module (IPM) for high speed switch.
Manufacture ROHM
Datasheet
Download BM63767S-VA Datasheet




ROHM BM63767S-VA
Datasheet
Inverter for motor control
600V IGBT Intelligent Power Module (IPM)
for high speed switching drive
BM63767S-VA BM63767S-VC
General Description
BM63767S-VA /-VC is an Intelligent Power Module
composed of gate drivers, bootstrap diodes, IGBTs, fly
wheel diodes.
Features
3phase DC/AC Inverter
600V/30A
Low Side IGBT Open Emitter
Built -in Bootstrap Diode
High Side IGBT Gate Driver(HVIC):
SOI (Silicon On Insulator) Process,
Drive Circuit, High Voltage Level Shifting,
Current Limit for Bootstrap Diode,
Control Supply Under-Voltage Locked Out (UVLO)
Low Side IGBT Gate Driver(LVIC):
Drive Circuit, Short Circuit Current Protection (SCP),
Control Supply Under Voltage Locked Out (UVLO),
Thermal Shutdown (TSD)
Fault Signal(LVIC)
Corresponding to SCP (Low Side IGBT), TSD, UVLO
Fault
Input Interface 3.3V, 5V Line
UL Recognized: File E468261
Application
High Speed Switching Drive of AC100 to 240Vrms(DC
Voltage: Less Than 400V) Class Motor
High Speed Switching Drive of Motor for Washing
Machine, Fan
Key Specifications
IGBT Collector-Emitter Voltage VCESAT: 1.7V(Typ)
FWD Forward Voltage VF:
1.5V(Typ)
FWD Reverse Recovery Time trr:
100ns(Typ)
Module Case Temperature TC:
-25 to +100°C
Junction Temperature Tjmax:
150°C
Package
HSDIP25
HSDIP25VC
W(Typ) x D(Typ) x H(Typ)
38.0mm x 24.0mm x 3.5mm
38.0mm x 24.0mm x 3.5mm
HSDIP25
Typical Application Circuit
Figure 1. Example of Application Circuit
+
+
+
5V
2 VBU
3 VBV
4 VBW
5 HINU
6 HINV
7 HINW
8 HVCC
9 GND
10 LINU
11 LINV
12 LINW
13 LVCC
+
15V
14 FO
15 CIN
16 GND
P 24
U 23
V 22
W 21
NU 20
M
+
NV 19
NW 18
Product structure: Semiconductor IC This product is not designed for protection against radioactive rays
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
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TSZ02201-0747AB500110-1-2
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ROHM BM63767S-VA
BM63767S-VA BM63767S-VC
Pin Configuration
17
NC
GND
CIN
FO
LVCC
LINW
LINV
LINU
GND
HVCC
HINW
HINV
HINU
VBW
VBV
TOP VIEW
12.6mm
9.2mm
Tc detecting point
18
18 NW
19 NV
20 NU
21 W
22 V
23 U
24 P
VBU
NC
1
25 NC
25
Figure 2. Pin Configuration and Tc Detecting Point
Pin Description
Pin No. Pin Name
Function
Pin No. Pin Name
Function
1 NC No connection(GND potential)
2 VBU U phase floating control supply
3 VBV V phase floating control supply
14 FO Alarm output
15
CIN
Detecting of short circuit current
trip voltage
16 GND Ground (Note 1)
4 VBW W phase floating control supply
17 NC No connection (Note 2)
5 HINU U phase high side IGBT control
18 NW W phase low side IGBT emitter
6 HINV V phase high side IGBT control
19 NV V phase low side IGBT emitter
7 HINW W phase high side IGBT control 20 NU U phase low side IGBT emitter
8 HVCC Control supply for HVIC
21 W W phase output
9 GND Ground (Note 1)
22 V V phase output
10 LINU U phase low side IGBT control
23 U U phase output
11 LINV V phase low side IGBT control
24 P Inverter supply
12 LINW W phase low side IGBT control
25 NC No connection (Note 2)
13 LVCC Control supply for LVIC
(Note 1) Two GND pins (9 & 16pin) are connected inside IPM, please connect one pin (16pin is recommended) to the 15V power supply GND outside and
leave the other open.
(Note 2) NC pins (17 & 25pin) are not electrically connected to any other potential inside.
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
2/20
TSZ02201-0747AB500110-1-2
30.Oct.2017 Rev.004



ROHM BM63767S-VA
BM63767S-VA BM63767S-VC
Block Diagram
VBU
2
VBV
3
VBW
4
HINU
5
HINV
6
HINW
7
HVCC
8
GND
9
10 LINU
LINV
11
LINW
12
13 LVCC
FO
14
CIN
15
GND
16
High Side
Gate Driver
(HVIC)
Low Side
Gate Driver
(LVIC)
P
24
U
23
V
22
W
21
NU
20
NV
19
NW
18
Figure 3. Block Diagram
Description of Block
1) High Side IGBT Drive (HVIC, Bootstrap Diode)
High voltage level shifting circuit drives high side IGBT.
Built-in bootstrap diode and current limit function for bootstrap diode enable HVIC to drive high side IGBT without
external component (bootstrap diode, resistor). There is under-voltage-locked-out (UVLO) function for floating control
power supply.
2) Low Side IGBT Drive (LVIC)
LVIC drives low side IGBT.
There is short circuit current protection (SCP), under-voltage locked out (UVLO) for control power supply LVCC,
thermal shutdown (TSD) function. Alarm signal (FO) will output when these protection circuits work.
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
3/20
TSZ02201-0747AB500110-1-2
30.Oct.2017 Rev.004







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