Schottky Rectifier. V1P6 Datasheet

V1P6 Rectifier. Datasheet pdf. Equivalent

V1P6 Datasheet
Recommendation V1P6 Datasheet
Part V1P6
Description Surface Mount Trench MOS Barrier Schottky Rectifier
Feature V1P6; www.vishay.com V1P6 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifi.
Manufacture Vishay
Datasheet
Download V1P6 Datasheet




Vishay V1P6
www.vishay.com
V1P6
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
TMBS® eSMP® Series
Top View
Bottom View
MicroSMP (DO-219AD)
Anode
Cathode
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
1.0 A
60 V
25 A
VF at IF = 1.0 A (125 °C)
0.45 V
TJ max.
Package
150 °C
MicroSMP (DO-219AD)
Circuit configuration
Single
FEATURES
• Very low profile - typical height of 0.65 mm
Available
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop
• Low power loss, high efficiency
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications, in commercial, industrial, and automotive
applications.
MECHANICAL DATA
Case: MicroSMP (DO-219AD)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, and RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V1P6
Device marking code
V16
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
VRRM
IF(AV)
IFSM
TJ (1), TSTG
60
1.0
25
-40 to +150
Note
(1) The heat generated must be less than the thermal conductivity from junction to ambient: dPD/dTJ < 1/RJA
UNIT
V
A
°C
Revision: 03-May-2018
1 Document Number: 87524
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay V1P6
www.vishay.com
V1P6
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
Reverse current per diode
Typical junction capacitance
IF = 0.5 A
IF = 1.0 A
IF = 0.5 A
IF = 1.0 A
VR = 60 V
4.0 V, 1 MHz
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
CJ
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: pulse width 5 ms
TYP.
0.45
0.52
0.35
0.45
-
1
130
MAX.
-
0.60
-
0.53
0.15
5
-
UNIT
V
mA
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V1PM10
Typical thermal resistance
RJA (1)(2)
RJM (3)
130
20
Notes
(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/ RJA
(2) Free air, mounted on FR4 PCB, 2 oz. standard footprint, RJA - junction to ambient
(3) Mounted on FR4 PCB, 2 oz. standard footprint, RJM - junction to mount
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
V1P6-M3/H
0.006
H
V1P6HM3/H (1)
0.006
H
Note
(1) AEC-Q101 qualified
BASE QUANTITY
4500
4500
DELIVERY MODE
7" diameter plastic tape and reel
7" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1.2
TM =140 ƱC, RthJM =20 ƱC/W
1.0
0.8
0.6
0.4
TA =25 ƱC, RthJA =130 ƱC/W
0.2
TM measured at cathode terminal mount
typical values
0
0 25 50 75 100 125
150
Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
0.6
D = 0.8
D = 0.5
0.5 D = 0.3
0.4 D = 0.2
D = 0.1
0.3
D = 1.0
0.2
T
0.1
0.0
0
D = tp/T
tp
0.2 0.4 0.6 0.8 1 1.2
Average Forward Current (A)
Fig. 2 - Average Power Loss Characteristics
Revision: 03-May-2018
2 Document Number: 87524
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay V1P6
www.vishay.com
V1P6
Vishay General Semiconductor
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 100 °C
TJ = 25 °C
1000
100
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.1
0
TJ = -40 °C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
1
0.1 1 10
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
100
10
TJ = 150 °C
1 TJ = 125 °C
TJ = 100 °C
0.1
0.01
0.001
TJ = 25 °C
0.0001
0.00001
TJ = -40 °C
0.000001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
1000
100
Junction to ambient
10
1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
MicroSMP (DO-219AD)
Cathode Band
0.059 (1.50)
0.043 (1.10)
0.030 (0.75)
0.022 (0.55)
0.055 (1.40)
0.047 (1.20)
0.039 (0.98)
0.031 (0.78)
0.030 (0.75)
0.022 (0.55)
0.029 (0.73)
0.025 (0.63)
0.091 (2.30)
0.083 (2.10)
0.106 (2.70)
0.091 (2.30)
0.011 (0.27)
0.005 (0.12)
0.043
(1.10)
Mounting Pad Layout
0.079
(2.00)
0.032
(0.80)
0.032
(0.80)
0.020 (0.50)
Revision: 03-May-2018
3 Document Number: 87524
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)