(Datasheet) V1P6 data sheet PDF





V1P6 Datasheet, Surface Mount Trench MOS Barrier Schottky Rectifier

V1P6   V1P6  

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www.vishay.com V1P6 Vishay General Semi conductor Surface Mount Trench MOS Bar rier Schottky Rectifier TMBS® eSMP® Series Top View Bottom View MicroSMP (DO-219AD) Anode Cathode DESIGN SUP PORT TOOLS click logo to get started Mo dels Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 1.0 A 60 V 25 A VF at IF = 1.0 A (125 °C) 0.45 V TJ ma x. Package 150 °C MicroSMP (DO

V1P6 Datasheet, Surface Mount Trench MOS Barrier Schottky Rectifier

V1P6   V1P6  
-219AD) Circuit configuration Single FEATURES • Very low profile - typica l height of 0.65 mm Available • Ide al for automated placement • Trench MOS Schottky technology • Low forwar d voltage drop • Low power loss, hig h efficiency • Meets MSL level 1, pe r J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Mat








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