(Datasheet) V2P6 data sheet PDF





V2P6 Datasheet, Surface Mount Trench MOS Barrier Schottky Rectifier

V2P6   V2P6  

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www.vishay.com V2P6 Vishay General Semi conductor Surface Mount Trench MOS Bar rier Schottky Rectifier TMBS® eSMP® Series Top View Bottom View MicroSMP (DO-219AD) Anode Cathode DESIGN SUP PORT TOOLS click logo to get started Mo dels Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 2A 60 V 30 A VF at IF = 2 A (125 °C) 0.51 V TJ max. Pa ckage 150 °C MicroSMP (DO-219A

V2P6 Datasheet, Surface Mount Trench MOS Barrier Schottky Rectifier

V2P6   V2P6  
D) Circuit configuration Single FEATU RES • Very low profile - typical hei ght of 0.65 mm Available • Ideal fo r automated placement • Trench MOS S chottky technology • Low forward vol tage drop • Low power loss, high eff iciency • Meets MSL level 1, per J-S TD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Auto motive ordering code: base P/NHM3 • Material








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