level FET. BUK7Y07-30B Datasheet

BUK7Y07-30B FET. Datasheet pdf. Equivalent

BUK7Y07-30B Datasheet
Recommendation BUK7Y07-30B Datasheet
Part BUK7Y07-30B
Description N-channel TrenchMOS standard level FET
Feature BUK7Y07-30B; BUK7Y07-30B N-channel TrenchMOS standard level FET Rev. 03 — 7 April 2010 Product data sheet 1. Pr.
Manufacture nexperia
Datasheet
Download BUK7Y07-30B Datasheet




nexperia BUK7Y07-30B
BUK7Y07-30B
N-channel TrenchMOS standard level FET
Rev. 03 — 7 April 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
„ Suitable for standard level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V Loads
„ Automotive systems
„ General purpose power switch
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj 25 °C; Tj 175 °C
voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 4
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 12;
see Figure 13
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 75 A; Vsup 30 V;
RGS = 50 ; VGS = 10 V;
Tj(init) = 25 °C; unclamped
QGD
gate-drain charge ID = 25 A; VDS = 24 V;
VGS = 10 V; see Figure 14
Min Typ Max Unit
- - 30 V
[1] - - 75 A
- - 105 W
- 5 7 m
- - 198 mJ
- 10.7 - nC



nexperia BUK7Y07-30B
Nexperia
BUK7Y07-30B
N-channel TrenchMOS standard level FET
[1] Continuous current is limited by package.
2. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S source
S source
S source
G gate
D mounting base; connected to
drain
Simplified outline
mb
1234
SOT669 (LFPAK)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
BUK7Y07-30B
LFPAK
Description
Version
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
BUK7Y07-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 7 April 2010
© Nexperia B.V. 2017. All rights reserved
2 of 14



nexperia BUK7Y07-30B
Nexperia
BUK7Y07-30B
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Conditions
Tj 25 °C; Tj 175 °C
RGS = 20 k
Tmb = 25 °C; VGS = 10 V; see Figure 1; [1]
see Figure 4
Min Typ Max Unit
- - 30 V
- - 30 V
-20 -
20 V
- - 75 A
Tmb = 100 °C; VGS = 10 V; see Figure 1
- - 63 A
IDM
peak drain current
Tmb = 25 °C; tp 10 µs; pulsed;
see Figure 4
- - 356 A
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Tmb = 25 °C; see Figure 2
--
-55 -
-55 -
105 W
175 °C
175 °C
IS
source current
Tmb = 25 °C
[1] - - 75 A
ISM peak source current tp 10 µs; pulsed; Tmb = 25 °C
- - 356 A
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
ID = 75 A; Vsup 30 V; RGS = 50 ;
VGS = 10 V; Tj(init) = 25 °C; unclamped
- - 198 mJ
EDS(AL)R
repetitive drain-source see Figure 3
avalanche energy
[2][3][4] - - - J
[5]
[1] Continuous current is limited by package.
[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[3] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[4] Refer to application note AN10273 for further information.
[5] Maximum value not quoted. Repetitive rating defined in avalanche rating figure.
BUK7Y07-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 7 April 2010
© Nexperia B.V. 2017. All rights reserved
3 of 14







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