N-channel MOSFET. PSMN1R1-40BS Datasheet

PSMN1R1-40BS MOSFET. Datasheet pdf. Equivalent

PSMN1R1-40BS Datasheet
Recommendation PSMN1R1-40BS Datasheet
Part PSMN1R1-40BS
Description N-channel MOSFET
Feature PSMN1R1-40BS; PSMN1R1-40BS N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK Rev. 2 — 29 February 2012 Produ.
Manufacture nexperia
Datasheet
Download PSMN1R1-40BS Datasheet




nexperia PSMN1R1-40BS
PSMN1R1-40BS
N-channel 40 V 1.3 mstandard level MOSFET in D2PAK
Rev. 2 — 29 February 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in D2PAK (SOT404) package qualified to 175 °C. This
product is designed and qualified for use in a wide range of industrial, communications
and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC convertors
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 25 A; Tj = 100 °C;
see Figure 12;see Figure 13
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 13
VGS = 10 V; ID = 75 A; VDS = 20 V;
see Figure 14;see Figure 15
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup 40 V; unclamped; RGS = 50 ;
tp = 0.1 ms
[1] Continuous current is limited by package
Min Typ Max Unit
- - 40 V
[1] - - 120 A
- - 306 W
-55 -
175 °C
-
1.68 2
m
- 1.16 1.3 m
- 32 - nC
- 136 - nC
- - 1.4 J



nexperia PSMN1R1-40BS
Nexperia
PSMN1R1-40BS
N-channel 40 V 1.3 mstandard level MOSFET in D2PAK
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain[1]
S source
D drain
[1] It is not possible to make connection to pin 2.
3. Ordering information
Simplified outline
mb
2
13
SOT404 (D2PAK)
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN1R1-40BS
D2PAK
4. Limiting values
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
Conditions
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C
VGS = 10 V; Tmb = 25 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A; Vsup 40 V;
unclamped; RGS = 50 ; tp = 0.1 ms
[1] Continuous current is limited by package.
PSMN1R1-40BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 February 2012
Min
-
-
-20
[1] -
[1] -
-
-
-55
-55
-
Max Unit
40 V
40 V
20 V
120 A
120 A
1320 A
306 W
175 °C
175 °C
260 °C
[1] -
120 A
- 1320 A
- 1.4 J
© Nexperia B.V. 2017. All rights reserved
2 of 14



nexperia PSMN1R1-40BS
Nexperia
PSMN1R1-40BS
N-channel 40 V 1.3 mstandard level MOSFET in D2PAK
350
ID
(A)
300
250
200
150
100
50
0
0
003a a f329
(1)
50 100 150 200
Tmb (C)
120
Pder
(%)
80
03aa16
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
104
ID
(A)
103
102
Limit R DS on = VDS / ID
10
1
10-1
10-1
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003a a f328
DC
10
tp =10 s
100 s
1 ms
10 ms
100 ms
V DS (V)
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN1R1-40BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 February 2012
© Nexperia B.V. 2017. All rights reserved
3 of 14







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